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首页> 外文会议>International Symposium on Designing, Processing and Properties of Advanced Engineering Materials(ISAEM 2003) pt.1; 20031105-20031108; Jeju Island; KR >Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology
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Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

机译：流动调制CVD技术在氮化钛层上沉积铜薄膜

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摘要

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD) technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl_4 flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.
机译：铜（Cu）薄膜已沉积到氮化钛（TiN）层上，该层先前已通过流动调制化学气相沉积（FMCVD）技术制备。已经研究了TiN层对Cu的扩散阻挡性能，这取决于TiN层的后退火和样品制备条件。通过在高真空环境中用5N靶材进行RF磁控溅射进行Cu沉积。通过将TiCl_4流循环切换为氩流，在单个CVD腔室中执行了FMCVD工艺，从而形成了TiN层的顺序沉积和氯还原工艺。已经观察到在TiN层生长期间较高的流量调制周期和Ar吹扫时间可在俄歇深度分布和X射线衍射分析中提供更好的扩散阻挡性能。

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