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首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >EXAMINATION OF OPTIMIZED STRUCTURES FOR a-Si:H BASED TRIPLE JUNCTION SOLAR CELLS
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EXAMINATION OF OPTIMIZED STRUCTURES FOR a-Si:H BASED TRIPLE JUNCTION SOLAR CELLS

机译：基于a-Si：H的三结太阳能电池优化结构的检验

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摘要

We have examined a-Si:H based triple junction solar cells by using the AMPS computer program. We have found that, although the a-SiC:H material has wider band-gap, it does not yield better performance than a-Si:H absorber as the first absorber in the triple junctions because of the severely degraded material quality of today's a-SiC:H in the stabilized state. Moreover, for the stabilized state, we find that the optimized thickness distributions of a-Si:H based triple junctions are thinner than those determined in the annealed state. Our results for optimized stable efficiencies show that (1) with today's a-SiC:H materials, stabilized cell efficiencies can be better with a-Si:H top cells, (2) sub-cell layers need to be thinner than generation current matching would suggest and (3) because of the need for thinner i layers, the window losses become critical (to keep Jsc up).
机译：我们已经使用AMPS计算机程序检查了基于a-Si：H的三结太阳能电池。我们已经发现，尽管a-SiC：H材料具有较宽的带隙，但由于当今a的材料质量严重下降，它没有比a-Si：H吸收剂作为三重结中的第一个吸收剂产生更好的性能。 -SiC：H处于稳定状态。此外，对于稳定状态，我们发现基于a-Si：H的三重结的最佳厚度分布比退火状态下确定的厚度分布更薄。我们获得的最佳稳定效率结果表明：（1）对于当今的a-SiC：H材料，a-Si：H顶部电池的稳定电池效率会更好;（2）子电池层需要比发电电流匹配更薄将建议和（3）由于需要更薄的i层，窗口损失变得至关重要（保持Jsc升高）。

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