• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >IMPROVEMENT OF a-Si SOLAR CELLS FABRICATED BY MERCURY-SENSITIZED PHOTO-CVD USING H_2 DILUTION METHOD
【24h】

IMPROVEMENT OF a-Si SOLAR CELLS FABRICATED BY MERCURY-SENSITIZED PHOTO-CVD USING H_2 DILUTION METHOD

机译：H_2稀释法改进汞致敏光化学气相沉积法制得的非晶硅太阳能电池

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The high quality-wide bandgap i-layers prepared by hydrogen dilution method were applied to a-Si solar cells fabricated by mercury-sensitized photo-CVD. It was found that the initial efficiency and stability of the cells were significantly improved compared to the undiluted one. This improvement was due to the increase in the quality and stability of an i-layer as confirmed by the dark I-V characteristics measurement of the solar cell. Two techniques for increasing the stabilized efficiency of the H_2-diluted i-layer-based solar cell were employed. First, the use of appropriate bandgap profile leads to the increase in J_(sc) while maintaining high FF, resulting in the increase in the stabilized efficiency. Another one is the improvement of V_(oc) of the solar cell by the optimization of the p- and buffer layer. By lowering the temperature of p- and buffer layers, the solar cell with V_(oc) as high as 0.990 V has been obtained.
机译：通过氢稀释法制备的高质量宽带隙i层被应用于通过汞敏化光CVD制造的a-Si太阳能电池。发现与未稀释的细胞相比，细胞的初始效率和稳定性显着提高。该改进归因于如通过太阳能电池的暗IV特性测量所证实的i层的质量和稳定性的增加。采用了两种技术来提高H_2稀释的i层基太阳能电池的稳定效率。首先，使用合适的带隙分布会导致J_（sc）的增加，同时保持较高的FF，从而导致稳定效率的提高。另一个是通过优化p层和缓冲层来提高太阳能电池的V_（oc）。通过降低p层和缓冲层的温度，已获得V_（oc）高达0.990 V的太阳能电池。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号