• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on photomask and next-generation lithography mask technology >Advanced FIB mask repair technology for ArF Lithography
【24h】

Advanced FIB mask repair technology for ArF Lithography

机译：ARF光刻的先进FIB面具修复技术

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

New ion beam column was used for mask repair. The ion irradiation was 15pA for the probe current and 31nm for the pixel size. The imaging damage was evaluated from the optical intensity value with MSM193. Optical intensity have the change within 5% in case of the repetition image in scanning until five times. The carbon film was formed with a new hydrocarbon gas which changed into the pyrene. It is a film that the halo is small and the optical density is about three times higher. The durability to the ArF laser of the carbon film was done by method of measuring the transmittance with MPM193. The carbon film has the durability that the change in the transmittance is within 0.3% by ArF laser irradiating of 30KJ·cm-2. The program defects formed to the L&S pattern was repaired by these new conditions. The repaired pattern was printed with ArF scanner on the wafer. The repaired pattern was not transferred defect on the wafer.
机译：新的离子束柱用于掩模修复。离子照射为探针电流和31nm的探针为像素尺寸。从MSM193的光学强度值评估成像损坏。在扫描到五次的重复图像的情况下，光学强度在5％内变化。用新的烃气体形成碳膜，该气体变为芘。它是光环小的薄膜，光密度高出三倍。通过测量MPM193的透射率的方法来完成对碳膜的ARF激光器的耐久性。碳膜具有耐久性，即透射率的变化在0.3％之内，通过ARF激光照射30KJ·CM-2。通过这些新条件修复了L＆S模式的程序缺陷。在晶片上用ARF扫描仪打印修复的图案。修复的图案在晶片上没有转移缺陷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号