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EB proximity effect correction system for 0.25-um device reticle fabrication

机译：用于0.25um器件掩模版制造的EB邻近效应校正系统

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Abstract: An electron-beam (EB) proximity effect correction (PEC) system for mask making has been developed, and is applied for 0.25 $mu@m device reticle fabrication with high accuracy and fast calculation speed. This system consists of three important functions: (1) fast proximity effect correction (2) high speed browser data interface (3) correction verification. For the fast proximity effect correction, SOR (Successive Over-Relaxation) method is applied for matrix calculation and two dimensional integral table is used for convolution. A parallel processing system using three workers (135MIPS each) controlled by one distributor (135MIPS) has been developed. For high accuracy, a delicate pattern data fracturing and outline algorithm is developed. The algorithm is also useful for OPC (Optical Proximity effect Correction). To realize high speed large volume data clipping, SPIF (Sony Plot Intermediate Format) is used with a modification to accept dose modulation data. A data verification and browser subsystem SRI (SPIF Reticle Image browser) is also constructed utilizing a SPIF data interface system. In this paper, key technologies supporting each function will be presented and the results applied to 0.25 $mu@m rule ASIC (Application-Specific IC) device reticle will also be presented.!7
机译：摘要：开发了一种用于掩模制造的电子束（EB）邻近效应校正（PEC）系统，该系统可用于0.25μμm的器件掩模版制造，具有较高的准确性和快速的计算速度。该系统包含三个重要功能：（1）快速邻近效应校正（2）高速浏览器数据接口（3）校正验证。对于快速的邻近效应校正，采用SOR（连续过度松弛）方法进行矩阵计算，并使用二维积分表进行卷积。已经开发了一种并行处理系统，该系统使用由一个分发器（135MIPS）控制的三个工作器（每个135MIPS）。为了获得较高的精度，开发了一种精细的图案数据压裂和轮廓算法。该算法对于OPC（光学邻近效果校正）也很有用。为了实现高速大容量数据裁剪，将SPIF（Sony Plot中间格式）与修改配合使用以接受剂量调制数据。还利用SPIF数据接口系统构造了数据验证和浏览器子系统SRI（SPIF网格图像浏览器）。本文将介绍支持每种功能的关键技术，并介绍适用于0.25 $μm规则ASIC（专用集成电路）器件标线的结果。！7

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