A new Y5V 0603 0.1 /spl mu/F ceramic chip capacitor

机译：新的Y5V 0603 0.1 / SPL MU / F陶瓷芯片电容器

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Improved technologies have been developed to manufacture 0.1 /spl mu/F surface mountable ceramic chips in the 0603 size. A new dielectric based on barium titanate was developed with a Y5V temperature characteristic to achieve maximum dielectric constant. These parts achieve excellent electrical and mechanical reliability and are robust in wave soldering processes. To minimize cost the dielectric was designed to fire at 1145/spl deg/C by adding compatible low melting glass frit in order to use low cost electrodes with a high percentage of silver. In order to increase the capacitance per layer improved manufacturing processes were developed to achieve thin dielectric layers and narrow electrode side margins.

机译：已经开发出改进的技术来制造0603尺寸的0.1 / SPL MU / F表面可安装陶瓷芯片。基于钛酸钡的新电介质具有Y5V温度特性，以实现最大介电常数。这些部件实现了出色的电气和机械可靠性，并且在波焊过程中具有稳健性。为了使成本最小化，通过加入兼容的低熔点玻璃料以便使用具有高百分比的银的低成本电极以1145 / SPL DEG / C在1145 / SPL DEG / C处进行射击。为了增加每个层的电容，改善了制造工艺以实现薄介电层和窄电极侧边缘。

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《Electronic Components and Technology Conference》|1994年||共5页
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Day J.; Gupta S.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. Phase composition, microstructure, and dielectric properties of dysprosium-doped Ba(Zr_(0.1)Ti_(0.9))O_3-based Y5V ceramics with high permittivity [J] . Yan Wang, Bin Cui, Lulu Zhang CERAMICS INTERNATIONAL . 2014,第8aPta1期

机译：高介电常数掺Ba（Zr_（0.1）Ti_（0.9））O_3基Y5V陶瓷的相组成，微观结构和介电性能
2. Phase composition, microstructure, and dielectric properties of dysprosium-doped Ba(Zr_(0.1)Ti_(0.9))O_3-based Y5V ceramics with high permittivity [J] . Yan Wang, Bin Cui, Lulu Zhang CERAMICS INTERNATIONAL . 2014,第8aPta1期

机译：高介电常数掺Ba（Zr_（0.1）Ti_（0.9））O_3基Y5V陶瓷的相组成，微观结构和介电性能
3. Phase composition, microstructure, and dielectric properties of dysprosium-doped Ba(Zr_(0.1)Ti_(0.9))O_3-based Y5V ceramics with high permittivity [J] . Yan Wang, Bin Cui, Lulu Zhang CERAMICS INTERNATIONAL . 2014,第8aPta1期

机译：掺镝Ba（Zr_（0.1）Ti_（0.9））O_3的基于Y5V陶瓷的相组成，微观结构和介电性能，具有高介电常数
4. A new Y5V 0603 0.1 /spl mu/F ceramic chip capacitor [C] . Day, J., Gupta, Electronic Components and Technology Conference, 1994. Proceedings., 44th . 1994

机译：新型Y5V 0603 0.1 / spl mu / F陶瓷片状电容器
5. Microelectronic device inspection system implementation and modeling for flip chips and multi-layer ceramic capacitors. [D] . Erdahl, Dathan Shane. 2005

机译：倒装芯片和多层陶瓷电容器的微电子设备检查系统实施和建模。
6. Samples of Ba1−xSrxCe0.9Y0.1O3−δ 0 x 0.1 with Improved Chemical Stability in CO2-H2 Gas-Involving Atmospheres as Potential Electrolytes for a Proton Ceramic Fuel Cell [O] . Magdalena Dudek, Bartłomiej Lis, Radosław Lach, 2020

机译：Ba1-xSrxCe0.9Y0.1O3-δ的样品0 x 0.1在涉及CO2-H2的大气中作为质子陶瓷燃料电池的潜在电解质具有改进的化学稳定性
7. Quasistatic Spice model targets ceramic capacitors with Y5V dielectric [O] . Coolens Hugo 2012

机译：准静态Spice模型针对具有Y5V电介质的陶瓷电容器

A new Y5V 0603 0.1 /spl mu/F ceramic chip capacitor

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