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Influence of AlN coverlayers prepared by reactive sputtering on DyFeCo magneto-optical media

机译:反应溅射在Dyfeco磁光介质上制备的ALN覆盖层的影响

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AlN_x/DyFeCo films were deposited on glass substrates by magnetron sputtering and reactive rf magnetron sputtering. The influence of AlN_x coverlayers on DyFeCo magneto-optical media was studied. The results show that nitrogen surplus in AlN_x leads to changes in the MO behavior of DyFeCo films due to the reaction of Dy with nitrogen. Furthermore, the influence of thickness of AlN films on te coercivity, anisotropy and eigenvalue of kerr rotation angle of RE-TM films was investigated. The results can be explained based on the internal stress, impurities and the pinning of defects induced by "peening effects" of high-speed atoms.
机译:通过磁控溅射和反应性RF磁控溅射沉积ALN_X / DYFECO薄膜。研究了aln_x覆盖层对Dyfeco磁光介质的影响。结果表明,由于DY与氮气的反应,ALN_X中的氮气过剩导致Dyfeco膜的Mo行为的变化。此外,研究了RE-TM膜的克尔旋转角度对Te矫顽力,各向异性和克尔旋转角度的Te矫顽力,各向异性和特征值的影响。结果可以基于高速原子“喷丸效应”诱导的缺陷的内部应力,杂质和捕捉来解释。

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