Gallium nitride: use in high power control applications

机译：氮化镓：用于高功率控制应用

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The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.

机译：讨论了在微波和RF控制应用中使用氮化镓场效应晶体管。提出了FET的控制模型，并用于预测导通电阻，断开状态电容和开关截止频率。还提出了栅极偏置电路和高功率操作对导通状态电阻的影响。

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《Annual IEEE Gallium Arsenide Integrated Circuit Symposium》|2002年||共4页
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Robert H. Caverly; Nikolai; V. Drozdovski; Colin Joye; Michael Quinn;
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中图分类 TN43-53;
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4. Gallium nitride: use in high power control applications [C] . Caverly R.H., Drozdovski N.V., Joye C., Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest . 2002

机译：氮化镓：用于大功率控制应用
5. Aluminum gallium nitride/gallium nitride HEMTs for high-power applications: Transistor design issues and process development. [D] . Kuliev, Almaz S. 2004

机译：高功率应用的氮化铝镓/氮化镓HEMT：晶体管设计问题和工艺开发。
6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

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7. Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications [O] . Dargahi Shayan 2012

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8. High Power Gallium Nitride Devices for Microwave and RF Control Applications [R] . Caverly, R. H. 2000

机译：用于微波和射频控制应用的高功率氮化镓器件

Gallium nitride: use in high power control applications

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