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Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N_2 Atmospheres

机译：Ti（Ta）-NI和Co-Ti薄膜的相形成沉积在N_2大气中的（001）Si

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A series of electron microscopy investigations on the microstructure produced by surface-diffusion reactions between Si substrates heated to 700-800 °C and Ti-Co, Ti-Ni or Ta-Ni alloys deposited in a nitrogen ambient with and without barrier layers are described. The TEM data show clear phase separation into TaSi_2 and NiSi_2 for the Ta-Ni film deposited in a high N_2 pressure ambient. Deposition at lower N_2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was also absent for Ni-Ti films even at high N_2 pressure. The presence of barrier layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSi_x amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co_2Si layers could be formed.

机译：描述了通过在沉积在氮气环境中的Si底物之间的表面扩散反应产生的微观结构上产生的一系列电子显微镜研究，其中沉积在氮环境中，具有和不具有阻挡层。的含有屏障层的粘附物。的Ti-Ni或Ta-Ni合金。 TEM数据显示出在高N_2压力环境中沉积的TA-Ni膜的Tasi_2和NISI_2的清晰相位分离。在较低的N_2压力下沉积导致形成混合的Ni-Ta-Si层。即使在高NO_2压力下，Ni-Ti薄膜也不存在相分离效果。阻挡层的存在强烈影响了Co-Ti-Si系统中的表面扩散反应。 Si表面的Ti-（O）或Cosi_x非晶层的形成防止了Si和Co的相互扩散，使得即使是纯CO或CO_2SI层也可以形成。

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《Materials Research Society Symposium》|2003年||共6页
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A. L. Vasiliev; M. Aindow; A. G. Vasiliev; I. A. Horin; A. A. Orlikovsky;
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Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N_2 Atmospheres

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