Epitaxial growth of Yb_2O_3 buffer layers on biaxially textured-Ni(100) substrates by sol-gel process

机译：通过溶胶 - 凝胶工艺在双轴纹理 - Ni（100）基材上的YB_2O_3缓冲层的外延生长

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In order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa_2Cu_3O_7- delta ) coated conductors, Yb_2O_3 has been chosen as the candidate materials. Buffer layers of Yb_2O_3 were epitaxially grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The Yb_2O_3 precursor solution was prepared from an alkoxide sol-gel route in 2-methoxyethanol and was deposited on textured-Ni(100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160 deg C unde rflowifng (96

机译：为了使用溶胶 - 凝胶工艺开发替代缓冲层架构以产生YBCO（YBA_2CU_3O_7-Δ）涂覆的导体，已选择YB_2O_3作为候选材料。第一次通过溶胶凝胶工艺在双轴纹理 - Ni（100）衬底上外延生长Yb_2O_3的缓冲层。由2-甲氧基乙醇中的醇盐溶胶 - 凝胶途径制备YB_2O_3前体溶液，并通过旋涂或浸涂方法沉积在纹理 - Ni（100）衬底上。然后在1160℃UNDET RFLOFIFNG（96）下加工无定形薄膜（96

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《Symposium on multicomponent oxide films for electronics》|1999年||共6页
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T.G.Chirayil; M.Paranthaman; D.B.Beach; J.S.Morrell; E.Y.Sun; A.Goyal; R.K.Williams; D.F.Lee; P.M.Martin; D.M.Kroeger; R.Feenstra; D.T.Verebelyi; D.K.Christen; Meterials Research Society;
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1. Growth of epitaxial Y2O3 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors by MOD approach [J] . Bhuiyan MS, Paranthaman M, Kang S, Physica, C. Superconductivity and its applications . 2005,第3a4期

机译：通过MOD方法在YBCO涂层导体的双轴织构Ni-W衬底上生长外延Y2O3缓冲层
2. MOD approach for the growth of epitaxial CeO_2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors [J] . M S Bhuiyan, M Paranthaman, S Sathyamurthy Superconductor Science & Technology . 2003,第11期

机译：MOD方法在YBCO涂层导体的双轴织构Ni-W衬底上生长外延CeO_2缓冲层
3. Growth of Epitaxial SrTiO_3 on Epitaxial (Ti, Al)N/Si(100) Substrate Using Ti-Buffer Layer [J] . Kenya Sano, Ryoichi Ohara, Takashi Kawakubo IEICE Transactions on Electronics . 2001,第6期

机译：Ti-缓冲层在外延（Ti，Al）N / Si（100）衬底上生长外延SrTiO_3
4. Epitaxial growth of Yb_2O_3 buffer layers on biaxially textured-Ni(100) substrates by sol-gel process [C] . T.G.Chirayil, M.Paranthaman, D.B.Beach, Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. . 1999

机译：溶胶凝胶法在双轴织构Ni（100）衬底上外延生长Yb_2O_3缓冲层
5. Zirconium nitride/aluminum nitride buffer layers for epitaxial growth of (indium,gallium) nitride on silicon substrates. [D] . Oliver, Mark H. 2008

机译：氮化锆/氮化铝缓冲层，用于在硅基板上外延生长（铟，镓）氮化物。
6. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate [O] . Min Zhang, Zuoxing Guo, Liang Zhao, 2018

机译：缓冲剂类型对InP（100）衬底上生长的In0.82Ga0.18As外延层的影响
7. Epitaxial Growth of Yb2O3 Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process [O] . T. G. Chirayil, M. Paranthaman, D. B. Beach, 1999

机译：通过溶胶 - 凝胶工艺在双轴纹理 - Ni（100）基材上的YB2O3缓冲层外延生长
8. Epitaxial Growth of Y(sub 2/sub O/sub 3) Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process [R] . Beach, D. B. , Chirayil, T. G. , Christen, D. K. , 1999

机译：溶胶 - 凝胶法在双轴织构Ni（100）衬底上外延生长Y（sub 2 / sub O / sub 3）缓冲层

Epitaxial growth of Yb_2O_3 buffer layers on biaxially textured-Ni(100) substrates by sol-gel process

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