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Thin film dielectrics for electronics using combustion chemical vapor deposition

机译：使用燃烧化学气相沉积的电子薄膜电介质

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This paper reviewed work to date on multicomponent oxides deposited, utilizing open-atmosphere Combustion Chemical Vapor Deposition for electronic applications. Epitaxial barium strontium titanate and strontium titanate thin films were depositedon (100) MgO single crystal substrates. They were patterned to form interdigitated structures for electrically tunable devices, namely, coupled microstripline phase shifters (CMPS). The undoped, as-deposited perovskite dielectrics exhibited a figure ofmerit of 53°/dB at 20 GHz and 23°C, indicating high degree of tunability and fairly low loss. High-permittivity (ε=263), polycrystalline BST and SrTiO{sub}3 were studied for dynamic random access memory, and leakage current density of 10{sup}-7)A/cm{sup}2 was measured. Intended for non-volatile ferroelectric memory, lead zirconium titanate was deposited onto a seed layer of perovskite structure to prevent the growth of the unwanted pyrochlore phase. To function as buffer layers forsuperconductor applications, epitaxial CeO{sub}2, YSZ, SrTiO{sub}3, LaAlO{sub}3, Y{sub}2O{sub}3, and Yb{sub}2O{sub}3 coatings on single crystal and textured nickel substrate were investigated. Electronic analyses and characterization, using SEM, EDS, XRD, and X-ray pole figures, were presented.
机译：本文审查了迄今为止沉积的多组分氧化物的工作，利用开放式燃烧​​化学气相沉积进行电子应用。钛酸外延钡锶和钛酸锶薄膜被Depositiboton（100）MgO单晶衬底。它们被图案化以形成用于电动可调谐器件的交叉结构，即耦合微带相移器（CMPS）。未掺杂的可沉积的钙钛矿电介质在20GHz和23°C下表现出53°/ dB的图，表明高度的可调性和相当低的损失。研究了高介电常数（ε= 263），对动态随机存取存储器进行了多晶BST和SRTIO {SUB} 3，测量了10 {SUP} -7）A / cm {sup} 2的漏电流密度。用于非挥发性铁电存储器，将锆钛酸锆沉积在钙钛矿结构的种子层上，以防止不需要的烧火相的生长。用作缓冲层的upercorionation应用程序，外延CEO {sub} 2，ysz，srtio {sub} 3，rao {sub} 3，y {sub} 2o {sub} 3，以及yb {sub} 2o {sub} 3涂层研究了单晶和纹理镍基材。呈现了电子分析和表征，使用SEM，EDS，XRD和X射线极值图。

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