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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Thin film dielectrics for electronics using combustion chemical vapor deposition
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Thin film dielectrics for electronics using combustion chemical vapor deposition

机译：使用燃烧化学气相沉积技术的电子产品薄膜电介质

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This paper reviewed work to dat aon multicomponetn oxidesdeposited, utilizing open-atmosphere Combustion Chemical Vapor Deposition for electronic applications. epitaxial barium strontium titanate and strontium titanate thin films were deposited on (100) MgO single crystal substrates. They were patterned to form interdigitated structures for electricaly tunable devices, namely, coupled microstripline phase shifters (CMPS). The undoped, as-deposited perovskite dielectrics exhibited a figure of merit of 53 deg/dB at 20 GHz and 23 deg c, indicating high degree of tunability and fairly low loss. High-permittivity ( epsilon =263), polycrystalline BST and SrTiO_3 were studie dfor dynamic random access memory, and leakage current density of 10~-7 A/cm~2 was measured. Intended for non-volatile ferroelectric memory, lead zirconium titanate was deposited onto a seed layer fo perovskite structure to prevent the growth of the unwanted pyrochlore phase. To function as buffer layers for superocnductor applications, epitaxial CeO_2, YSZ, SrTiO_3, LaAlO_3, Y_2O_3, and Yb_2O_3 coatings on single crystal and textured nickel substrate wer einvestigated. Electronic analyses and characterization, using SEM, EDS, XRD, and X-ray pole figures, were presented.
机译：本文回顾了利用开放式大气燃烧化学气相沉积技术在电子应用中沉积多复合氧化物的工作。将外延钛酸锶钡和钛酸锶薄膜沉积在（100）MgO单晶衬底上。对它们进行构图，以形成用于电可调设备的指状结构，即耦合微带线移相器（CMPS）。未掺杂，沉积态的钙钛矿电介质在20 GHz和23℃时的品质因数为53 deg / dB，表明可调性高，损耗低。研究了高介电常数（ε= 263），多晶BST和SrTiO_3作为动态随机存取存储器，测得的漏电流密度为10〜-7 A / cm〜2。为了用于非易失性铁电存储器，钛酸铅锆沉积在钙钛矿结构的晶种层上，以防止有害的烧绿石相的生长。为了用作超导体应用的缓冲层，需要研究单晶和织构镍衬底上的外延CeO_2，YSZ，SrTiO_3，LaAlO_3，Y_2O_3和Yb_2O_3涂层。介绍了使用SEM，EDS，XRD和X射线极图进行的电子分析和表征。

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