Evaluation of Schottky Contact Parameters in MSM-Photodiode Structures

机译：MSM-Photodiode结构中肖特基接触参数的评估

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The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodiode structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the eletric field and tunneling through the barrier. It is shown that, under these conditions the I-V measurements can be used as a fast and simple method to evaluate the barrier height, saturation current density and junction ideality factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment.

机译：通过在不同温度下的电流 - 电压（I-V）测量分析金属半导体 - 金属（MSM）肖特基势垒光电二极管结构的电动特性。通过考虑到Eletric场的屏障高度和隧道通过屏障隧穿的屏障高度依赖来检查肖特基触点的反向特性。结果表明，在这些条件下，I-V测量可以用作快速简单的方法，以评估MSM-PhotoDiode肖特基触点的屏障高度，饱和电流密度和结理想因子。结果与实验一致。

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《Conference on challenges in process integration and device technology》|2000年||共6页
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Stanislav V.Averine; Yuen Chuen Chan; Yee loy Lam; SPIE-The International Society for Optical Engineering;
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正文语种
中图分类半导体技术;
关键词
Photodiode; Schottky contact; barrier height; ideality factor; I-V characteristics; semiconductor;

机译：光电二极管;肖特基联系;屏障高度;理想因素;I-V特性;半导体;

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1. Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga/sub 0.47/In/sub 0.53/As with p/sup +/-Ga/sub 0.47/In/sub 0.53/As cap layer [J] . Averin S.V., Kohl A. Electronics Letters . 1992,第11期

机译：n-Ga / sub 0.47 / In / sub 0.53 / As上具有p / sup +/- Ga / sub 0.47 / In / sub 0.53 / As盖层的低暗电流准肖特基势垒MSM光电二极管结构
2. Evaluation Of Schottky Barrier Parameters Of Pd/pt Schottky Contacts On N-inp (100) In Wide Temperature Range [J] . A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy, Superlattices and microstructures . 2009,第1期

机译：宽温度范围内N-inp（100）上Pd / pt肖特基接触的肖特基势垒参数评估
3. Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure [J] . H Elhadidy, J Sikula, J Franc Semiconductor science and technology . 2012,第1期

机译：肖特基接触的金属-半导体-金属结构的对称电流-电压特性和CdTe结构的参数检索
4. Evaluation of Schottky Contact Parameters in MSM-Photodiode Structures [C] . Stanislav V.Averine, Yuen Chuen Chan, Yee loy Lam Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA . 2000

机译：MSM光电二极管结构中肖特基接触参数的评估
5. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. [D] . Sarpatwari, Karthik. 2009

机译：理解金属/半导体肖特基接触的电性能：块体和纳米级结构中势垒不均匀性和几何形状的影响。
6. Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials [O] . Jia Liu, Ji-Chang Ren, Tao Shen, 2020

机译：van der WALS金属半导体 - 金属结构的不对称肖特基触点基于二维Janus材料
7. Metal semiconductor contacts: the role of interface structures on the Schottky barrier [O] . Buuren M.R.J. van 1997

机译：金属半导体触点：界面结构在肖特基势垒上的作用

Evaluation of Schottky Contact Parameters in MSM-Photodiode Structures

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