GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

机译：GaAs，Algaas和Ingap隧道接线用于浓度的多结太阳能电池：抵抗研究

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AIGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of < 10~(-4) Ω cm~2 and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm~2). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances > 5x10~(-4) Ωcm~2.

机译：研究了以下四个TJ设计，AlGaAs / AlgaAs，GaAs / GaAs，AIGAAS / InGaP和AlgaAs / GaAs，以确定最小掺杂浓度，以实现<10〜（-4)Ωcm〜2的电阻和峰隧道电流对于MJ太阳能电池，高达1500-阳光浓度（21A / cm〜2的工作电流）。通过实验校准的数值模型用于确定电阻如何随着掺杂浓度的函数而变化。确定ALGAAS / GAAS TJ设计需要最小的掺杂浓度，以实现指定的电阻和峰隧道电流，然后是GAAS / GAAS，以及AlgaAs / Algaas TJ设计。 Algaas / Ingap TJ设计只能实现电阻> 5x10〜（-4）Ωcm〜2。

著录项

来源
《International Conference on Concentrating Photovoltaic Systems》|2010年||共4页
会议地点
作者
Jeffrey F. Wheeldon; Christopher E. Valdivia; Alex Walker; Gitanjali Kolhatkar; Denis Masson; Bruno Rie1; Simon Fafard; Abdelatif Jaouad; Artur Turala; Richard Ares; Vincent Aimez; Trevor J. Hall; Karin Hinzer;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TK513-532;
关键词
Concentrated photovoltaics; tunnel junctions; AlGaAs; multi-junction solar cell; semiconductors; concentrator systems; solar energy;

机译：浓缩光伏;隧道结;藻类;多结太阳能电池;半导体;浓缩器系统;太阳能;

相似文献

外文文献
中文文献
专利

1. Design and optimization of ARC less InGaP/GaAs single-/ multi-junction solar cells with tunnel junction and back surface field layers [J] . Chee Kuan W. A., Hu Yuning Superlattices and microstructures . 2018,第jula期

机译：具有隧道结和背面场层的无弧InGaP / GaAs单/多结太阳能电池的设计和优化
2. Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells [J] . Y. Mols, M.R. Leys, E. Simons, Journal of Crystal Growth . 2007,第Jan期

机译：多结太阳能电池隧道二极管本征碳掺杂AlGaAs层的研究
3. InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate [J] . Hung Wei Yu, Chen Chen Chung, Chin Te Wang, Japanese journal of applied physics . 2012,第8ISSUE1期

机译：带有AlGaAs / GaAs隧道二极管的InGaP / GaAs双结太阳能电池生长在偏离取向的GaAs衬底10°处
4. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study [C] . Jeffrey F. Wheeldon, Christopher E. Valdivia, Alex Walker, International Conference on Concentrating Photovoltaic Systems . 2010

机译：GaAs，Algaas和Ingap隧道接线用于浓度的多结太阳能电池：抵抗研究
5. Characterisation of high-efficiency multi-junction solar cells and tunnel junctions. [D] . Kolhatkar, Gitanjali. 2011

机译：高效多结太阳能电池和隧道结的表征。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells [O] . G. W. Shu, J. Y. Lin, H. T. Jian, 2012

机译：从Ingaas Subcell到Ingap / Ingaas / GE多结太阳能电池的Ingap Subcell的光学耦合
8. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack [R] . Dinetta, L. C., Hannon, M. H., Mcneely, J. B., 1991

机译：alGaas顶部太阳能电池，用于多结串联集中器太阳能电池堆中的机械连接

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

摘要

著录项

相似文献

相关主题

期刊订阅