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首页> 外文会议>Symposium on microelectromechanical structures for materials research >INVESTIGATION OF THE MECHANICAL PROPERTIES AND ADHESION OF P.V.D. TUNGSTEN FILMS ON Si AND SILICON COMPOUNDS BY BULGE AND BLISTER TESTS
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INVESTIGATION OF THE MECHANICAL PROPERTIES AND ADHESION OF P.V.D. TUNGSTEN FILMS ON Si AND SILICON COMPOUNDS BY BULGE AND BLISTER TESTS

机译：研究P.V.D的力学性能和粘附性研究。 通过凸起和泡罩测试在Si和硅化合物上钨膜

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摘要

P.V.D. tungsten films deposited on silicon wafers (covered or not with a P.E.C.V.D. silicon oxide, nitride or oxynitride sublayer) were submitted to bulge and blister tests. The mechanical equilibrium and geometry of the bulged tungsten membranes is compared to various models. From this analysis, values of the residual stresses and the Young's moduli in the films are derived, and found to be consistent with previous values deduced from curvature radius measurements or other mechanical test methods, as functions of the deposition conditions. Decohesion of the films from their substrates is easily observed on the W / SiO_2 / Si membranes, and the film / sublayer interfacial fracture energy is estimated about 1 J/m~2. This energy increases when the sublayer is changed from SiO_2 to silicon oxi-nitride and to nitride. The W / Si membranes show a much stronger adhesion than the abovementioned ones and could not be debonded before bursting.
机译：P.V.D. 沉积在硅晶片上的钨膜（覆盖或不用P.E.C.D.氧化硅，氮化硅或氮氧化物子层）被提交以凸出和泡罩测试。 将凸出的钨膜的机械平衡和几何形状与各种型号进行比较。 从该分析中，得出残余应力和杨氏模的值，并发现与从曲率半径测量或其他机械测试方法推导的先前值一致，作为沉积条件的功能。 在W / SiO_2 / Si膜上容易观察到从它们的底物中脱粘，膜/子层界面裂缝能量估计约为1J / m〜2。 当子层从SiO_2改变到氧化氧 - 氮化物和氮化物时，这种能量增加。 W / Si膜显示比上述粘附更强烈的粘附性，并且在爆裂之前不能脱粘。

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