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THE SURFACE MODIFICATION WITH FLUOROCARBON THIN FILMS FOR THE PREVENTION OF STICTION IN MEMS

机译:用氟碳薄膜进行表面改性,用于预防MEMS中的静态

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Highly hydrophobic fluorocarbon films were prepared by the vapor phase (VP) deposition method in a vacuum chamber using both liquid (3M's FC40, FC722) and solid sources (perfluorodecanoic acid (CF_3(CF_2)_8COOH), perfluorododecane (C_(12)F_(26))) on Al, Si and oxide coated wafers. The highest static contact angles of water were measured on films deposited on aluminum substrate. But relatively lower contact angles were obtained on the films on Si and oxide wafers. The advancing and receding contact angle analysis using a captive drop method showed a large contact angle hysteresis (AH) on the VP deposited fluorocarbon films. AFM study showed poor film coverage on the surface with large hysteresis. FTIR-ATR analysis positively revealed the stretching band of CF_2 groups on the VP deposited substrates. The thermal stability of films was measured at 150°C in air and nitrogen atmospheres as a function of time. The rapid decrease of contact angles was observed on VP deposited FC and PFDA films in air. However, no decrease of contact angle on them was observed in N_2.
机译:使用液体(3M的FC40,FC722)和固体源(全氟二癸酸(CF_3(CF_3)_8COOH),全氟二癸烷(C_(12)F_(C_(12)F_(C_(12)F_( 26)))在Al,Si和氧化涂层晶片上。在沉积在铝基板上的膜上测量水的最高静态接触角。但是在Si和氧化物晶片上的薄膜上获得相对较低的接触角。使用夹持液滴方法的推进和后退接触角分析显示VP沉积的氟碳膜上的大接触角滞后(AH)。 AFM研究表明,表面上有薄膜覆盖率,具有大滞后。 FTIR-ATR分析肯定地显示了VP沉积基材上CF_2组的拉伸带。作为时间的函数,在空气和氮气环境中在150℃下测量膜的热稳定性。在VP沉积的Fc和PFDA薄膜中观察到接触角的快速降低。然而,在N_2中没有观察到它们上的接触角的降低。

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