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首页> 外文会议>Microelectromechanical structures for materials research >THE SURFACE MODIFICATION WITH FLUOROCARBON THIN FILMS FOR THE PREVENTION OF STICTION IN MEMS
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THE SURFACE MODIFICATION WITH FLUOROCARBON THIN FILMS FOR THE PREVENTION OF STICTION IN MEMS

机译：用氟碳薄膜修饰表面以防止微机电系统中的位错

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摘要

Highly hydrophobic fluorocarbon films were prepared by the vapor phase (VP) deposition method in a vacuum chamber using both liquid (3M's FC40, FC722) and solid sources (perfluorodecanoic acid (CF_3(CF_2)_8COOH), perfluorododecane (C_(12)F_(26))) on Al, Si and oxide coated wafers. The highest static contact angles of water were measured on films deposited on aluminum substrate. But relatively lower contact angles were obtained on the films on Si and oxide wafers. The advancing and receding contact angle analysis using a captive drop method showed a large contact angle hysteresis (AH) on the VP deposited fluorocarbon films. AFM study showed poor film coverage on the surface with large hysteresis. FTIR-ATR analysis positively revealed the stretching band of CF_2 groups on the VP deposited substrates. The thermal stability of films was measured at 150℃ in air and nitrogen atmospheres as a function of time. The rapid decrease of contact angles was observed on VP deposited FC and PFDA films in air. However, no decrease of contact angle on them was observed in N_2.
机译：使用液体（3M's FC40，FC722）和固体源（全氟癸酸（CF_3（CF_2）_8COOH），全氟十二烷（C_（12）F_（ 26）））在Al，Si和氧化物涂层的晶圆上。在沉积在铝基板上的膜上测量了水的最高静态接触角。但是在硅和氧化物晶片上的膜上获得了相对较低的接触角。使用捕获滴落法进行的前进和后退接触角分析表明，在VP沉积的碳氟化合物薄膜上有较大的接触角滞后（AH）。原子力显微镜的研究表明，在薄膜表面的覆膜较差，具有较大的滞后现象。 FTIR-ATR分析显示了VP沉积基材上CF_2基团的拉伸带。薄膜的热稳定性是在150℃的空气和氮气气氛中随时间变化的。在空气中VP沉积的FC和PFDA薄膜上观察到接触角迅速减小。然而，在N_2中未观察到它们的接触角减小。

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  • 会议地点 San Francisco CA(US)
  • 作者

    Sang-Ho Lee; Myong-Jong Kwon; Jin-Goo Park; Yong-Kweon Kim; Hyung-Jae Shin;

  • 作者单位

    Dept of Metallurgy and Materials Engineering, Hanyang University, Ansan, 425 - 791, Korea;

    Dept of Metallurgy and Materials Engineering, Hanyang University, Ansan, 425 - 791, Korea;

    Dept of Metallurgy and Materials Engineering, Hanyang University, Ansan, 425 - 791, Korea;

    School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea;

    Core Technology Research Center, Samsung Electronics Co. Ltd., Suwon, 442-742, Korea;

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  • 正文语种 eng
  • 中图分类 结构;材料;
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