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EFFECTS OF BUFFER LAYERS ON EPITAXIAL GROWTH OF PMN AND PZN BASED THIN FILMS ON Si

机译:缓冲层对Si上PMN和PMN基薄膜外延生长的影响

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The effect of the buffer layers on epitaxial growth and perovskite structure development of Pb(Mgi/3Nbw)O3 (PMN) and Pb(Zni/3NbM)O3 (PZN) based thin films on Si was investigated. The films were fabricated by pulsed laser deposition (PLD). On CeO2/Y203-stabilized ZrO2(YSZ) buffered-Si substrates, epitaxial pyrochlore films were obtained and no perovskite phase were detected regardless of the deposition conditions. On the other hand, PMN films of perovskite structure were epitaxially grown with (001) orientation on SrTiO3/CeO2/YSZ buffered-Si substrates. These differences were explained in terms of the crystal structural matching and interface stability between film and buffer layer. In addition, it was found that the perovskite structure development of PMN and PZN based thin films could be drastically enhanced by terminating SrTiO3 surface with SrO atomic layer.
机译:研究了缓冲层对Si的Pb(MgI / 3NBW)O3(PMN)和PB(PMN)和PB(ZnI / 3NBM)O3(PZN)的薄膜的外延生长和钙钛矿结构发育的影响。 通过脉冲激光沉积(PLD)制造薄膜。 在CeO 2 / Y203稳定的ZrO2(YSZ)缓冲-SI衬底上,获得外延烧火膜,无论沉积条件如何,检测到钙钛矿相。 另一方面,钙钛矿结构的PMN薄膜在SRTIO3 / CEO2 / YSZ缓冲-SI基材上外延生长(001)取向。 在薄膜和缓冲层之间的晶体结构匹配和界面稳定性方面解释了这些差异。 此外,发现通过用SRO原子层终止SRTIO3表面可以大大提高PMN和PMN和PMN基薄膜的钙钛矿结构。

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