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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >Optical Measurements of Critical Dimensions at Several Stages of the Mask Fabrication Process
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Optical Measurements of Critical Dimensions at Several Stages of the Mask Fabrication Process

机译：掩模制造过程的几个阶段的临界尺寸的光学测量

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摘要

Critical dimension (CD) metrology is an essential part of the mask manufacturing process. We present a metrology solution based on broadband reflectometry, covering a wavelength range from 190 to 1000 nm, in one nanometer intervals. The analysis is performed using Forouhi-Bloomer dispersion equations, in conjunctions with Rigorous Coupled Wave Analysis (RCWA). The method provides accurate and repeatable results for critical dimensions, thickness, and optical properties (n and k spectra from 190 — 1000 nm) for all materials present in the structure. In terms of throughput (several seconds per point) and suitability for integration, the method has many advantages over conventional metrology techniques. Measurements were performed on two masks, at two different stages of the mask manufacturing process -After Etch Inspection (AEI) and After Strip Inspection (ASI). CD uniformity distribution maps at 121 points on the mask were obtained for 800 nm pitch grating arrays. The results were compared to conventional CD-SEM measurements collected at the same locations. A linearity study was conducted on 760 and 1120 nm pitch grating arrays with systematically increasing CD width. The results demonstrate excellent correlation with CD-SEM.
机译：临界尺寸（CD）测量是在掩模的制造工艺的主要部分。我们提出了一个测量解决方案基于宽带反射，覆盖的波长范围从190至1000纳米，在一个纳米的间隔。使用FORUHI-Bloomer色散方程进行分析，与具有严格的耦合波分析（RCWA）的缀合物。该方法提供准确和可重复的结果为临界尺寸，厚度和光学性质（n和k的光谱190 - 1000纳米）中存在的结构的所有材料。在的吞吐量（每点几秒钟）和适宜于集成方面，该方法具有优于常规度量技术的许多优点。测量在两个掩模进行的，在掩模的制造工艺-After浸蚀检验（AEI）的两个不同的阶段和带材检验（ASI）之后。 CD均匀分布在121点映射对800nm的节距光栅阵列获得的掩模。结果进行了比较，在同一地点采集的传统的CD-SEM测量。甲线性研究是与系统地增加CD宽度上760点1120纳米的节距光栅阵列进行。结果表明与CD-SEM良好的相关性。

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