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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Optical Measurements of Critical Dimensions at Several Stages of the Mask Fabrication Process
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Optical Measurements of Critical Dimensions at Several Stages of the Mask Fabrication Process

机译：在掩模制造过程的多个阶段进行关键尺寸的光学测量

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摘要

Critical dimension (CD) metrology is an essential part of the mask manufacturing process. We present a metrology solution based on broadband reflectometry, covering a wavelength range from 190 to 1000 nm, in one nanometer intervals. The analysis is performed using Forouhi-Bloomer dispersion equations, in conjunctions with Rigorous Coupled Wave Analysis (RCWA). The method provides accurate and repeatable results for critical dimensions, thickness, and optical properties (n and k spectra from 190 — 1000 nm) for all materials present in the structure. In terms of throughput (several seconds per point) and suitability for integration, the method has many advantages over conventional metrology techniques. Measurements were performed on two masks, at two different stages of the mask manufacturing process - After Etch Inspection (AEI) and After Strip Inspection (ASI). CD uniformity distribution maps at 121 points on the mask were obtained for 800 nm pitch grating arrays. The results were compared to conventional CD-SEM measurements collected at the same locations. A linearity study was conducted on 760 and 1120 nm pitch grating arrays with systematically increasing CD width. The results demonstrate excellent correlation with CD-SEM.
机译：关键尺寸（CD）度量是掩模制造过程的重要组成部分。我们提出了一种基于宽带反射仪的计量解决方案，该解决方案以1纳米的间隔覆盖了190至1000 nm的波长范围。使用Forouhi-Bloomer色散方程结合严格耦合波分析（RCWA）进行分析。该方法为结构中存在的所有材料的关键尺寸，厚度和光学特性（190和1000 nm的n和k光谱）提供了准确且可重复的结果。就吞吐量（每点几秒钟）和集成的适用性而言，该方法比传统的计量技术具有许多优势。在掩模制造过程的两个不同阶段对两个掩模进行了测量-蚀刻检查（AEI）和剥离检查之后（ASI）。对于800 nm间距光栅阵列，获得了掩模上121个点的CD均匀性分布图。将结果与在相同位置收集的常规CD-SEM测量结果进行比较。在760和1120 nm间距光栅阵列上进行了线性研究，系统地增加了CD宽度。结果证明与CD-SEM具有极好的相关性。

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