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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >Evaluation of OPC quality using automated edge placement error measurement with CD-SEM
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Evaluation of OPC quality using automated edge placement error measurement with CD-SEM

机译：使用CD-SEM自动边缘放置误差测量评估OPC质量

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Optical proximity correction (OPC) plays a vital role in the lithography process of cutting-edge IC fabrication. The quality of lithography models used in OPC is fundamental to the final performance of the OPC in production. Traditionally, two-dimensional proximity features such as line-end, bar-to-bar or bar-to-line were only partially characterized because of the difficulty in transferring the SEM information into the OPC model building process. A new methodology of edge placement error (EPE) measurement using CD-SEM is proposed as part of an OPC model building and process/OPC qualification flow. It is not easy to generate EPE measurements because of the inherent need to overlay the design and the SEM in order to quantify EPE. The quality of the EPE measurement depends on both the accuracy of the SEM image scan rotation and magnification, but also on the accuracy of pattern matching between the design layout pattern and the realized pattern (wafer). These problems do not exist in simulation, but model calibration requires a direct comparison between simulation and measurement. Measuring EPE effectively brings the measurement information into the realm of the design. Hitachi High-Technologies has developed a "fully automated EPE measurement function" based on design layout and detected edges of SEM image as a solution to this issue. This study shows several practical evaluation results using the automated EPE measurement function. The applications that will be discussed are as follows. 1) Design based classification of edges and subsequent quantification of SEM EPE for many types of edge arrangement and orientation. In this study, we will examine line-end-adjacent, line-end, corner, and other critical gate edges. 2) SEM image based classification of EPE fliers as a new population of errors. 3) Comparison between the detected edge of the feature within the SEM image and a polygon shape generated by lithography simulation to determine the quality of the simulation. 4) Conversion of the SEM image edge contour into an OASIS file and construction of a process variability band to quantify CD variability for all 2D contexts in a SEM image.
机译：光学邻近校正（OPC）在尖端IC制造的光刻过程中起着至关重要的作用。 OPC中使用的光刻模型的质量是oPC生产中最终表现的基础。传统上，诸如线路端，条形杆或条形线等二维接近特征仅被部分地表征，因为难以将SEM信息转移到OPC模型构建过程中。建议使用CD-SEM的边缘放置误差（EPE）测量的新方法作为OPC模型构建和过程/ OPC资格流程的一部分。由于固有的需要覆盖设计和SEM以量化EPE，因此不容易产生EPE测量。 EPE测量的质量取决于SEM图像扫描旋转和放大的精度，也取决于设计布局图案和实现模式（晶片）之间的图案匹配的精度。这些问题在模拟中不存在，但模型校准需要在仿真和测量之间直接比较。测量EPE有效地将测量信息带入设计的领域。日立高科技基于设计布局的“全自动EPE测量功能”，并检测到SEM图像的边缘作为解决此问题的解决方案。本研究显示了使用自动化EPE测量功能的几种实际评估结果。将讨论的应用程序如下。 1）基于设计的边缘分类和随后定量SEM EPE的定量，用于许多类型的边缘布置和方向。在这项研究中，我们将检查线路邻近，线端，角和其他临界栅极边缘。 2）基于SEM图像的EPE飞行员分类为新的错误群。 3）SEM图像内的特征的检测边缘与光刻模拟产生的多边形形状之间的比较，以确定模拟质量。 4）将SEM图像边缘轮廓转换为OASIS文件和工艺变化频带的构造，以定量SEM图像中所有2D上下文的CD变化。

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