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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Evaluation of OPC Quality using Automated Edge Placement Error Measurement with CD-SEM
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Evaluation of OPC Quality using Automated Edge Placement Error Measurement with CD-SEM

机译：使用带有CD-SEM的自动边缘放置误差测量来评估OPC质量

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Optical proximity correction (OPC) plays a vital role in the lithography process of cutting-edge IC fabrication. The quality of lithography models used in OPC is fundamental to the final performance of the OPC in production. Traditionally, two-dimensional proximity features such as line-end, bar-to-bar or bar-to-line were only partially characterized because of the difficulty in transferring the SEM information into the OPC model building process. A new methodology of edge placement error (EPE) measurement using CD-SEM is proposed as part of an OPC model building and process/OPC qualification flow. It is not easy to generate EPE measurements because of the inherent need to overlay the design and the SEM in order to quantify EPE. The quality of the EPE measurement depends on both the accuracy of the SEM image scan rotation and magnification, but also on the accuracy of pattern matching between the design layout pattern and the realized pattern (wafer). These problems do not exist in simulation, but model calibration requires a direct comparison between simulation and measurement. Measuring EPE effectively brings the measurement information into the realm of the design. Hitachi High-Technologies has developed a "fully automated EPE measurement function" based on design layout and detected edges of SEM image as a solution to this issue. This study shows several practical evaluation results using the automated EPE measurement function. The applications that will be discussed are as follows. 1. Design based classification of edges and subsequent quantification of SEM EPE for many types of edge arrangement and orientation. In this study, we will examine line-end-adjacent, line-end, corner, and other critical gate edges. 2. SEM image based classification of EPE fliers as a new population of errors. 3. Comparison between the detected edge of the feature within the SEM image and a polygon shape generated by lithography simulation to determine the quality of the simulation. 4. Conversion of the SEM image edge contour into an OASIS file and construction of a process variability band to quantify CD variability for all 2D contexts in a SEM image.
机译：光学邻近校正（OPC）在尖端IC制造的光刻工艺中起着至关重要的作用。 OPC中使用的光刻模型的质量是生产中OPC最终性能的基础。传统上，由于难以将SEM信息传递到OPC模型构建过程中，因此仅部分地表征了诸如线端，条对条或条对线之类的二维邻近特征。作为OPC模型构建和过程/ OPC认证流程的一部分，提出了一种使用CD-SEM测量边缘放置误差（EPE）的新方法。生成EPE测量值并不容易，因为固有的需要覆盖设计和SEM以量化EPE。 EPE测量的质量不仅取决于SEM图像扫描旋转和放大倍数的精度，而且还取决于设计布局图案与实际图案（晶圆）之间的图案匹配精度。这些问题在仿真中不存在，但是模型校准需要在仿真和测量之间进行直接比较。测量EPE可将测量信息有效地带入设计领域。日立高科技已根据设计布局和检测到的SEM图像边缘开发了“全自动EPE测量功能”，以解决此问题。这项研究显示了使用自动EPE测量功能的一些实际评估结果。将讨论的应用程序如下。 1.基于设计的边缘分类，然后对许多类型的边缘排列和方向进行SEM EPE量化。在本研究中，我们将检查线端相邻，线端，拐角和其他关键浇口边缘。 2.基于SEM图像的EPE传单分类为新的错误人群。 3.在SEM图像中检测到的特征边缘与通过光刻模拟生成的多边形形状之间的比较，以确定模拟的质量。 4.将SEM图像边缘轮廓转换为OASIS文件，并构建过程可变性带以量化SEM图像中所有2D上下文的CD可变性。

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