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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Microlithography >ArF photo resist pattern sample preparation method using FIB without protective coating
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ArF photo resist pattern sample preparation method using FIB without protective coating

机译：ARF光致电图案样品制备方法使用FIB没有防护涂层

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This paper presents a novel method of FIB (FIB: focused ion beam) sample preparation to accurately evaluate critical dimensions and profiles of ArF photo resist patterns without the use of a protective coating on the photo resist. In order to accomplish this, the FIB micro-sampling method that is one of effective FIB milling and fabrication method was employed. First a Si cap is picked up from a silicon wafer and fixed to ArF photo resist patterns to protect against ion beam irradiation. Then, a micro-sample, a piece of Si-capped ArF photo resist, was extracted from the bulk ArF photo resist. In this procedure, this silicon cap always protects ArF photo resist patterns against ion beam irradiation. For the next step, the micro-sample is fixed to a needle stub of the FIB-STEM (STEM: scanning transmission electron microscopy) compatible rotation holder. This sample on the needle stub was rotated 180 degrees and milled from the side of Si substrate. Lastly, the sample is milled to the thickness of 2 μm. In this process, the ion beam is irradiating from the silicon substrate side to minimize the ion beam irradiation damages on the ArF photo resist patterns. EDX (EDX: Energy dispersive X-ray spectroscopy) analysis proved that no gallium ions were detected on the surface of the ArF photo resist patterns. The feasibility of high accelerating voltage observation of STEM to observe line edge roughness of a thick sample like 2 μm without shrinkage has been demonstrated.
机译：本文介绍了一种新颖的FIB（FIB：聚焦离子束）样品制剂，以精确地评估ARF光致抗蚀剂图案的临界尺寸和轮廓，而不使用光致抗蚀剂对抗保护涂层。为了实现这一点，采用了作为有效的FIB铣削和制造方法之一的FIB微抽样方法。首先，从硅晶片上拾取Si盖，并固定到ARF光致抗蚀器图案以防止离子束照射。然后，从散装ARF照片抗蚀剂中提取微样品，一块Si封端的ARF照片抗蚀剂。在该过程中，该硅盖始终保护ARF光抗蚀器图案免受离子束照射。对于下一步，微样品固定到FIB杆（阀杆：扫描透射电子显微镜）兼容的旋转支架的针质。针头存根上的该样品旋转180度并从Si衬底的侧铣削。最后，将样品研磨成2μm的厚度。在该过程中，离子束从硅衬底侧照射以最小化ARF照片抗蚀剂图案上的离子束照射损坏。 EDX（EDX：能量分散X射线光谱）分析证明，在ARF光致抗蚀剂图案的表面上没有检测到镓离子。已经证明了茎高加速电压观察的可行性，观察厚样品的线边缘粗糙度，如2μm而不收缩。

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