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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >ArF photo resist pattern sample preparation method using FIB without protective coating
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ArF photo resist pattern sample preparation method using FIB without protective coating

机译：使用无保护涂层的fib的arf光刻胶图案样品制备方法

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摘要

This paper presents a novel method of FIB (FIB: focused ion beam) sample preparation to accurately evaluate critical dimensions and profiles of ArF photo resist patterns without the use of a protective coating on the photo resist. In order to accomplish this, the FIB micro-sampling method that is one of effective FIB milling and fabrication method was employed. First a Si cap is picked up from a silicon wafer and fixed to ArF photo resist patterns to protect against ion beam irradiation. Then, a micro-sample, a piece of Si-capped ArF photo resist, was extracted from the bulk ArF photo resist. In this procedure, this silicon cap always protects ArF photo resist patterns against ion beam irradiation. For the next step, the micro-sample is fixed to a needle stub of the FIB-STEM (STEM: scanning transmission electron microscopy) compatible rotation holder. This sample on the needle stub was rotated 180 degrees and milled from the side of Si substrate. Lastly, the sample is milled to the thickness of 2 μm. In this process, the ion beam is irradiating from the silicon substrate side to minimize the ion beam irradiation damages on the ArF photo resist patterns. EDX (EDX: Energy dispersive X-ray spectroscopy) analysis proved that no gallium ions were detected on the surface of the ArF photo resist patterns. The feasibility of high accelerating voltage observation of STEM to observe line edge roughness of a thick sample like 2 μm without shrinkage has been demonstrated.
机译：本文介绍了一种新颖的FIB（聚焦离子束）样品制备方法，可以准确评估ArF光致抗蚀剂图案的关键尺寸和轮廓，而无需在光致抗蚀剂上使用保护性涂层。为了实现这一点，采用了一种有效的FIB研磨和制造方法之一的FIB微采样方法。首先，从硅晶片上拿起一个硅盖，并固定在ArF光刻胶图案上，以防止离子束辐照。然后，从块状ArF光致抗蚀剂中提取微样品，一片硅封端的ArF光致抗蚀剂。在此过程中，此硅盖始终保护ArF光刻胶图形免受离子束照射。下一步，将微样品固定到FIB-STEM（STEM：扫描透射电子显微镜）兼容旋转支架的针头上。将针头上的样品旋转180度并从Si基板的侧面进行研磨。最后，将样品研磨至2μm的厚度。在该过程中，从硅基板侧照射离子束以使对ArF光致抗蚀剂图案的离子束照射损害最小化。 EDX（EDX：能量色散X射线光谱法）分析证明，在ArF光致抗蚀剂图案的表面上未检测到镓离子。已经证明了通过STEM的高加速电压观察来观察厚的样品（如2μm）的线边缘粗糙度而没有收缩的可行性。

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