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Analog Operation and Harmonic Distortion Temperature Dependence of nMOS Junctionless Transistors

机译：NMOS连接晶体管的模拟操作和谐波失真温度依赖性

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Due to the decreasing gate control on the channel charges, planar MOS devices have become inadequate for nodes beyond 45 nm (1). For this reason, the development of new structures has been necessary. Amongst several alternatives, multiple gate devices such as FinFETs and Trigate transistors have emerged as strong candidates to future technologies. Multigate devices present a silicon nanowire surrounded by gate material, providing a significant improvement on the control of the channel charges. However, as the gate length is scaled, these multigate structures have to present sharper source and drain junctions, which can become a bottleneck in extremely shorter devices due to tunneling effect where ultra-sharp junctions shall be performed. The formation of these junctions presents a challenge since it requires extremely precise doping and thermal conditions to avoid the lateral diffusion of impurities to the channel. To avoid this problem, a novel structure called Junctionless multigate field-effect transistor has been recently proposed (2).
机译：由于沟道电荷上的栅极控制减小，平面MOS器件对于超过45nm（1）的节点变得不足。因此，需要开发新结构。在几种替代方案中，多个栅极设备（如FinFET和Triggory晶体管）都是强大的未来技术的强烈候选者。多相器件呈现由栅极材料包围的硅纳米线，对通道电荷的控制提供显着改善。然而，随着栅极长度的缩放，这些多格子结构必须呈现更清晰的源极和漏极结，这可能成为由于隧道效应而导致的极其较短的装置中的瓶颈，其中应该执行超尖角点。这些交叉点的​​形成具有挑战，因为它需要极其精确的掺杂和热条件，以避免杂质对通道的横向扩散。为了避免这个问题，最近已经提出了一种名为NEXICTIONS CultiGate场效应晶体管的新颖结构（2）。

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