• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>MEMS/MOEMS Components and Their Applications III >Silicon On Insulator Inertial MEMS Device Processing
【24h】

Silicon On Insulator Inertial MEMS Device Processing

机译：绝缘体上硅惯性MEMS器件处理

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

During the 1980's and 1990's the methods used to manufacture inertial MEMS devices could be divided into two groups; bulk and surface micromachining. Institutions which developed high precision inertial MEMS devices usually employed bulk micromachining processes. This was done to fabricate devices with large proof masses and stiff beams which result in a high scale factor, as well as high drive, and sense frequencies. New processes have been developed which are based on silicon on insulator (SOI) wafers. These processes combine the advantages of bulk and surface micromachining while enabling the etching of thick proof masses. This paper illustrates the manufacturing and performance advantages of an SOI inertial MEMS process.
机译：在1980年代和1990年代，惯性MEMS器件的制造方法可分为两类：体和表面微加工。开发高精度惯性MEMS器件的机构通常采用批量微加工工艺。这样做是为了制造具有大检测质量和刚性梁的器件，从而导致高比例因子以及高驱动和感测频率。已经开发了基于绝缘体上硅（SOI）晶片的新工艺。这些工艺结合了本体和表面微加工的优点，同时能够蚀刻厚实的质量块。本文说明了SOI惯性MEMS工艺的制造和性能优势。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号