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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.1 >Litho Metrology Challenges for the 45nm Technology Node and Beyond
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Litho Metrology Challenges for the 45nm Technology Node and Beyond

机译：45纳米技术节点及以后的光刻技术挑战

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摘要

There are numerous metrology challenges facing photolithography for the 45 nm technology node and beyond in the areas of critical dimension (CD), overlay and defect metrology. Many of these challenges are identified in the 2005 International Technology Roadmap for Semiconductors (ITRS). The Lithography and Metrology sections of the ITRS call for measurement of 45/32/22/18 nm generation linewidth and overlay. Each subsequent technology generation requires less variation in CD linewidth and overlay control, which results in a continuing need for improved metrology precision. In addition, there is an increasing need to understand individual edge variation and edge placement errors relative to the intended design. This is accelerating the need for new methods of CD and overlay measurement, as well as new target structures. This paper will provide a comprehensive overview of the CD and overlay metrology challenges for photolithography, taking into account the areas addressed in the 2005 ITRS for the 45 nm technology generation and beyond.
机译：对于45 nm技术节点以及关键尺寸（CD），覆盖和缺陷计量领域，光刻技术面临许多计量挑战。在《 2005年国际半导体技术路线图》（ITRS）中确定了许多挑战。 ITRS的“光刻”和“计量”部分要求测量45/32/22/18 nm的生成线宽和重叠。随后的每一代技术都要求CD线宽和覆盖控制的变化较小，这导致对改进计量精度的持续需求。另外，越来越需要了解相对于预期设计的各个边缘变化和边缘放置误差。这加速了对CD和覆盖测量的新方法以及新目标结构的需求。本文将针对2005年ITRS中针对45纳米技术及以后的技术领域，全面综述CD的光刻技术和叠加计量学所面临的挑战。

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