• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Microelectronics technology and devices - SBMicro 2010 >Influence of the nitrogen concentration on the photoinduced hydrophilicity of N-doped titanium dioxide thin films deposited by plasma sputtering
【24h】

Influence of the nitrogen concentration on the photoinduced hydrophilicity of N-doped titanium dioxide thin films deposited by plasma sputtering

机译：氮浓度对等离子体溅射沉积N掺杂二氧化钛薄膜光诱导亲水性的影响

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Titanium dioxide (TiO_2) is a well studied material and commonly used for many photocatalytic (1) and photoelectrochemical (2) applications. In photocatalysis, it has been used for decomposition of water and degradation of organic pollutants in air as well aqueous media. On the other hand, in photoelectrochemistry it has been used in microelectronic devices as, for example, in solar cells applications. Titanium dioxide thin films are easily produced by chemical or physical methods and show good stability under illumination in most environments (3). However, there are some disadvantages as, for example, absorption only in ultraviolet spectrum, once the band gap of this material (around 3.2 eV) is quite high when the crystalline structure is predominantly anatase (4). Then, aiming to improve the photoelectrochemical efficiency it is desirable to red-shift the photoelectrochemical onset to also include the less energetic but more intense visible part of the solar spectrum (3), about which a large number of papers have been published elsewhere (5-7). Nevertheless, substitutional N-doping was found to be particularly effective in decreasing the band gap of anatase below 3.0 eV (8).
机译：二氧化钛（TiO_2）是一种经过充分研究的材料，通常用于许多光催化（1）和光电化学（2）应用。在光催化中，它已用于空气中以及水介质中的水分解和有机污染物的降解。另一方面，在光电化学中，它已用于微电子器件中，例如，在太阳能电池应用中。二氧化钛薄膜很容易通过化学或物理方法生产，并且在大多数环境下在光照下显示出良好的稳定性（3）。但是，存在一些缺点，例如仅当在晶体结构中主要是锐钛矿时该材料的带隙（大约3.2 eV）很高时，才吸收紫外光谱（4）。然后，为了提高光电化学效率，希望对光电化学反应进行红移，使其也包括太阳光谱中能量较低但强度更大的可见光部分（3），关于该部分在其他地方已发表了大量论文（5）。 -7）。然而，发现替代的N掺杂在将锐钛矿的带隙降低到3.0 eV以下特别有效（8）。

著录项

  • 来源
  • 会议地点 Sao Paulo(BR);Sao Paulo(BR)
  • 作者

    D. R. Irala; H. S. Maciel; D. A. Duarte; M. Massi; A. S. da Silva Sobrinho;

  • 作者单位

    Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, S. J. dos Campos, Brazil;

    Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, S. J. dos Campos, Brazil;

    Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, S. J. dos Campos, Brazil;

    Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, S. J. dos Campos, Brazil;

    Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, S. J. dos Campos, Brazil;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号