Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs

机译：衬底旋转和温度对三栅极SOI nMOSFET的迁移率和串联电阻的影响

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In this work a comparative experimental analysis of the electron mobility and parasitic source-drain series resistance of triple-gate n-channel MOSFETs as a function of the temperature is carried out. Devices with different fin widths fabricated on standard non-rotated and 45° rotated SOI substrates were analyzed for temperatures ranging from 250 K to 400 K. It is shown that the use of rotated substrate does not affect the subthreshold slope or the threshold voltage variation with temperature of these devices. On the other hand, the change in the conduction plane not only improves the mobility, but also promotes a rise of its variation with temperature. Although the fin width reduction may cause an increase of the series resistance, the increased mobility of rotated devices is responsible for the series resistance roll-off and this reduction becomes larger as the fin is narrowed.

机译：在这项工作中，对三栅极n沟道MOSFET的电子迁移率和寄生源极-漏极串联电阻随温度的变化进行了对比实验分析。分析了在标准非旋转和45°旋转SOI衬底上制造的具有不同鳍宽的器件的温度范围为250 K至400K。结果表明，旋转衬底的使用不会影响亚阈值斜率或阈值电压变化。这些设备的温度。另一方面，传导平面的变化不仅改善了迁移率，而且还促进了其随温度变化的增加。尽管鳍片宽度的减小可能会导致串联电阻的增加，但旋转器件迁移率的增加是造成串联电阻滚降的原因，并且随着鳍片变窄，这种减小变得更大。

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《Microelectronics technology and devices - SBMicro 2011》|2011年|p.223-230|共8页
会议地点 Joao Pessoa(BR);Joao Pessoa(BR)
作者
M. de Souza; J. A. Martino; E. Simoen; C. Claeys; M. A. Pavanello;
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作者单位

Department of Electrical Engineering, Centro Universitario da FEI, Sao Bernardo do Campo, Brazil;

LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil;

Imec, Leuven, Belgium;

Imec, Leuven, Belgium,E. E. Dept, KU Leuven, Leuven, Belgium;

Department of Electrical Engineering, Centro Universitario da FEI, Sao Bernardo do Campo, Brazil;

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正文语种 eng
中图分类半导体技术;
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1. Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K [J] . M. A. Pavanello, A. S. Nicolett, J. A. Martino Journal de Physique, IV: Proceedings of International Conference . 1998,第3期

机译：衬底对增强型SOI nMOSFET有效沟道长度和77 K时串联电阻提取的影响分析
2. Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's [J] . Pan Y., Ng K.K. IEEE Electron Device Letters . 1994,第12期

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3. Impact of Gate Misalignment in Triple-Gate MOSFETs Fabricated on SOI Substrate [J] . K-I Na, S. Cristoloveanu, W. Xiong ECS Solid State Letters . 2012,第2期

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4. Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs [C] . M. de Souza, J. A. Martino, E. Simoen, Symposium on Microelectronics Technology and Devices . 2011

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Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs

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