Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

著录项

• 来源
  《Nitride semiconductors》|1997年|447-452|共6页
• 会议地点 Boston MA(US)
• 作者

  Joachim Krueger; Sudhir G.S.; Dorina Corlatan; Yihwan Kim; Ralf Klockenbrink; Sergei Rouvimov; Zuzanna Liliental-Weber; Christian Kisielowski; Michael Rubin; Eicke R. Weber; Brian McDermott; R.Pittman; Edward R.Gertner;

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• 作者单位

  Department of Materials Science, University of California at Berkeley;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;

  Ma;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词