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首页> 外文会议>Nitride semiconductors >DISLOCATION DISTRIBUTION AND SUBGRAIN STRUCTURE OF GaN FILMS DEPOSITED ON SAPPHIRE BY HVPE AND MOVPE
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DISLOCATION DISTRIBUTION AND SUBGRAIN STRUCTURE OF GaN FILMS DEPOSITED ON SAPPHIRE BY HVPE AND MOVPE

机译：HVPE和MOVPE沉积在蓝宝石上的GaN薄膜的位错分布和亚晶结构

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摘要

Transmission electron microscopy (TEM) was used to characterize the microstructure in GaN films deposited by two different methods. An 11 μm thick film was deposited directly on a sapphire substrate by HVPE; an 8 μm thick film was deposited on a 15 nm buffer layer of AlN on sapphire by MOVPE. The dislocation densities in the top layer of the HVPE and MOVPE ilms were～10~9 cm~(-2) and～5 × 10~9 cm~(-2) respectively. In the HVPE film this was almost exclusively threading dislocations (TDs), ～70% of which had edge character. In addition to the TDs, the MOVPE sample also contained an appreciable number of dislocations lying in the basal plane. The microstructure of each film was dominated by a subgrain structure of slightly misoriented cells. In the MOVPE specimen, approximately 90% of the TDs were associated with subgrain walls, whereas only approximately 75% of the dislocations in the HVPE specimen were associated with walls. Both the HVPE and MOVPE samples experienced 40% coarsening of the cells through the thickness of the film. The subgrains of the MOVPE sample were 75% smaller than those in the HVPE sample (350 and 1300 nm, respectively). The average dislocation spacing in the walls was 50% smaller in the MOVPE sample than in the HVPE sample (82 and 180 nm, respectively).
机译：透射电子显微镜（TEM）用于表征通过两种不同方法沉积的GaN膜的微观结构。通过HVPE将11μm厚的膜直接沉积在蓝宝石衬底上；通过MOVPE在蓝宝石上的15 nm AlN缓冲层上沉积了8μm厚的膜。 HVPE和MOVPE薄膜的上层的位错密度分别为〜10〜9 cm〜（-2）和〜5×10〜9 cm〜（-2）。在HVPE薄膜中，这几乎完全是螺纹位错（TDs），其中约70％具有边缘特征。除TD外，MOVPE样品还包含位于基底平面中的大量位错。每个薄膜的微观结构都以亚晶结构为主，该亚晶结构的细胞方向略有错位。在MOVPE标本中，约90％的TD与亚晶粒壁有关，而HVPE标本中只有约75％的位错与壁有关。 HVPE和MOVPE样品均经历了整个膜厚度增加40％的晶胞粗化。 MOVPE样品的亚粒度比HVPE样品（分别为350和1300 nm）小75％。 MOVPE样品中壁的平均位错间距比HVPE样品（分别为82和180 nm）小50％。

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  • 来源
    《Nitride semiconductors》|1997年|417-422|共6页
  • 会议地点 Boston MA(US)
  • 作者

    K.A. DUNN; S.E. BABCOCK; R. VAUDO; V. PHANSE; J. REDWING;

  • 作者单位

    Materials Science Program, University of Wisconsin - Madison, 927 Engineering Research Building, 1500 Engineering Dr., Madison, Wisconsin 53706;

    Materials Science Program, University of Wisconsin - Madison, 927 Engineering Research Building, 1500 Engineering Dr., Madison, Wisconsin 53706;

    Advanced Technology Materials, Inc., 7 Commerce Dr., Danbury, CT 06810-4169;

    Advanced Technology Materials, Inc., 7 Commerce Dr., Danbury, CT 06810-4169;

    Epitronics, 21001 N. 19th Ave., Suite 5, Phoenix, AZ 85027-2726;

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  • 正文语种 eng
  • 中图分类 材料;
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