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VACUUM PRESSURE MOCVD GROWTH AND CHARACTERIZATION OF ALN FILMS ON MGO(100), SAPPHIRE, AND SI

机译：MGO（100），蓝宝石和SI上的真空压力MOCVD生长和ALN膜的表征

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Films of AlN were grown on MgO(100), Al_2O_3, and Si under vacuum pressure (10~(-3) to 10~(-4) Torr) at different substrate temperatures. They were examined ex situ with infrared reflectance spectroscopy, scanning electron microscopy, x-ray diffraction and rutherford backscattering spectroscopy. Highly oriented smooth films were grown at film thicknesses below 1 μm. Thicker films showed significantly more roughness but remained oriented with respect to the substrate. AlN growth was faster on Si than MgO(100) or Al_2O_3 and Si was the only substrate that growth was observed at 500 ℃.

机译：AlN薄膜在MgO（100），Al_2O_3和Si上在真空压力（10〜（-3）到10〜（-4）Torr）和不同的衬底温度下生长。用红外反射光谱，扫描电子显微镜，x射线衍射和卢瑟福背散射光谱对它们进行了异地检查。高取向的光滑膜以低于1μm的膜厚度生长。较厚的薄膜显示出明显更高的粗糙度，但相对于基材保持定向。 AlN在Si上的生长要比MgO（100）或Al_2O_3快，并且Si是唯一在500℃观察到生长的衬底。

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《Nitride semiconductors》|1997年|179-184|共6页
会议地点 Boston MA(US)
作者
A. D. Serra; N. P. Magtoto; D. C. Ingram; H. H. Richardson;
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Department of Chemistry, Ohio University, Athens, OH 45701;

Department of Chemistry, University of Toronto, Toronto, Canada M5S 1A1;

Department of Physics, Ohio University, Athens, OH 45701;

Department of Chemistry, Ohio University, Athens, OH 45701;

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VACUUM PRESSURE MOCVD GROWTH AND CHARACTERIZATION OF ALN FILMS ON MGO(100), SAPPHIRE, AND SI

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