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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >High κGate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy
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High κGate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

机译：分子束外延技术用于硅和化合物半导体的高κ门介电体

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摘要

The ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high K gate oxide Ga_2O_3(Gd_2O_3), and the rare earth oxides Gd_2O_3 and Y_2O_3. The epitaxy and the interfaces of Gd_2O_3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd_2O_3 and Y_2O_3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.
机译：通过超高真空物理气相沉积控制硅和化合物半导体上超薄介电膜的生长和界面的能力已导致对使用高K栅极氧化物Ga_2O_3（Gd_2O_3）以及稀土氧化物Gd_2O_3和Y_2O_3的栅极堆叠进行全面研究。 Gad，GaN和Si上Gd_2O_3的外延和界面具有原子精度，并且显示出很强的顺应下层衬底的趋势，从而为低界面态密度以及GaAs和GaN的有效钝化的基本机理提供了见识。表面。这些具有突变界面和受控微结构的Gd_2O_3和Y_2O_3门极堆栈被用作模型系统，以阐明CMOS缩放中材料集成的关键问题。

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