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2D Dopant Profiling for Advanced Process Control

机译：用于高级过程控制的2D掺杂物分析

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As the CMOS device dimensions continue to shrink, it is more and more critical to control the process parameters during mass production of advanced VLSI chips in order to achieve high yield and profitability. 2D dopant characterization is one of the critical techniques to resolve manufacturing excursions. A quick access to dopant distribution, especially precise delineation of p-n junction would readily provide critical information for many manufacturing issues, as well as device design and process development. Here we present our approaches to some of those issues with available techniques. The main techniques we used are dopant selective etching (DSE) and scanning probe microscopy based electrical measurements including scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM). These techniques provided complementary results and showed strengths in solving different issues. We have successfully delineated junction of CMOS devices with 0.13 μm technology with source/drain extensions. Other applications, including diode leakage, well-well isolation, and buried layer delineation with the combination of these methods are presented.
机译：随着CMOS器件尺寸的不断缩小，在先进VLSI芯片的批量生产期间控制工艺参数以实现高产量和高利润率变得越来越重要。 2D掺杂剂表征是解决制造偏差的关键技术之一。快速获得掺杂剂分布，特别是p-n结的精确描绘，将很容易为许多制造问题以及器件设计和工艺开发提供关键信息。在这里，我们介绍了使用可用技术解决其中一些问题的方法。我们使用的主要技术是掺杂剂选择性蚀刻（DSE）和基于扫描探针显微镜的电气测量，包括扫描电容显微镜（SCM）和扫描扩展电阻显微镜（SSRM）。这些技术提供了互补的结果，并显示出解决不同问题的优势。我们已经成功地描绘了具有源/漏扩展的0.13μm技术的CMOS器件的结。结合这些方法，还介绍了其他应用，包括二极管泄漏，阱-阱隔离和掩埋层描绘。

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