A Selective Etching Process for Chemically Inert High-k Metal Oxides

机译：化学惰性高k金属氧化物的选择性蚀刻工艺

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Once annealed, high-k metal oxides such as HfO_2 and Al_2O_3 can be extremely difficult to etch by wet chemical methods. Here we describe how ion bombardment at relatively low energy (a few hundred eV) can be used to make exposed regions of annealed HfO_2 films etchable in aqueous HF-based solutions. HfO_2 layers, 2-5 nm in thickness, were deposited by atomic layer chemical vapor deposition (ALCVD) on Si substrates, annealed at 700 ℃, and subjected to selected-area ion bombardment supplied by an oxygen plasma in a reactive ion etching tool. Etch times (as indicated by time to "dewet") were examined as a function of HfO_2 thickness, the power and time of oxygen plasma treatments, post-oxygen-plasma anneals, and wet etch chemistry. Strategies for etching thicker films and additional data provided by electrochemical open circuit potential (OCP) measurements will also be discussed.

机译：退火后，高k金属氧化物（例如HfO_2和Al_2O_3）可能很难通过湿化学方法进行蚀刻。在这里，我们描述了如何使用相对较低的能量（几百eV）进行离子轰击，以使可退火的HfO_2膜的暴露区域在基于HF的水溶液中可蚀刻。通过原子层化学气相沉积（ALCVD）在Si衬底上沉积厚度为2-5 nm的HfO_2层，在700℃退火，并在反应离子刻蚀工具中通过氧等离子体提供的选择区域离子轰击。根据HfO_2厚度，氧等离子体处理的能力和时间，氧等离子体后退火和湿法蚀刻化学的函数来检查蚀刻时间（如“去湿”的时间所示）。还将讨论用于蚀刻较厚膜的策略以及电化学开路电势（OCP）测量提供的其他数据。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.79-84|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Katherine L. Saenger; Harald F. Okorn-Schmidt; Christopher P. DEmic;
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IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. A Selective Etching Process for Chemically Inert High-k Metal Oxides [C] . Katherine L. Saenger, Harald F. Okorn-Schmidt, Christopher P. DEmic Materials Research Society Symposium . 2003

机译：用于化学惰性高k金属氧化物的选择性蚀刻方法
5. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity. [D] . Shoeb, Juline. 2012

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6. Double-walled iron oxide nanotubes via selective chemical etching and Kirkendall process [O] . João Azevedo, M. P. Fernández-García, César Magén, -1

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8. Selective suppression of photochemical etching: Raman spectroscopy for pre-etch process selection [R] . Ashby, CIH, Myers 1992

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A Selective Etching Process for Chemically Inert High-k Metal Oxides

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