首页> 外文会议>Optical Microlithography XI >Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography
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Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography

机译:使用248 nm光刻技术对200和240 nm接触窗进行亚分辨率辅助功能和离轴照明优化

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Abstract: Sub-resolution assist features, coupled with appropriate off- axis illumination conditions, have been studied with the goal of fabricating 200 and 240 nm contact windows with uniform critical dimensions over a range of pitches and with large depths of focus (DOF). Results show that 240 nm isolated contacts without assist features possessed a useful DOF of less than 0.4 microns. The same features with 140 nm assist slots on each window edge, located 190 nm away, possessed a DOF of over 0.8 microns, using quadrupole illumination. Soft quadrupole illumination, where a mixture of quadrupole and conventional illumination is employed, yielded nearly the same DOF as quadrupole and printed both semi-dense and isolated contact windows near their optimum size as well. Contact holes, 200 nm wide, have been printed with smaller sub- resolution features, soft quadrupole illumination, and higher performance resists with a DOF of over 0.6 microns using a stepper with a numerical aperture of 0.53. !4
机译:摘要:已经研究了亚分辨率辅助功能以及适当的离轴照明条件,目的是制造200和240 nm的接触窗,这些接触窗在一定的间距范围内具有大的景深(DOF),并且具有一致的临界尺寸。结果表明,没有辅助功能的240 nm隔离触点具有小于0.4微米的有用DOF。使用四极杆照明,在距离190 nm的每个窗口边缘上具有140 nm辅助槽的相同功能,其DOF超过0.8微米。使用四极和常规照明混合的软四极照明产生的自由度几乎与四极相同,并且在接近其最佳尺寸的同时印刷了半密集和隔离接触窗。使用直径为0.53的步进器,已印制了200 nm宽的接触孔,具有较小的亚分辨率特征,柔和的四极照明和DOF超过0.6微米的高性能抗蚀剂。 !4

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