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首页> 外文会议>Optical Microlithography XIX pt.1 >Studies of Consequences of Photo-Acid Generator Leaching in 193-nm Immersion Lithography
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Studies of Consequences of Photo-Acid Generator Leaching in 193-nm Immersion Lithography

机译：193 nm浸没式光刻中光酸发生剂浸出的后果研究

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Leaching of resist components into the water has been reported in several studies. Potential effects of photo-acid generator (PAG) dissolved in water include photocontamination of the last optical surface and the formation of particulate defects on the wafer surface. In order to determine the impact of these phenomena on lithographic performance, such as optics lifetime and yield, we have initiated a set of controlled studies, where predetermined amounts of PAG were introduced into pure water and the results monitored quantitatively. One set of studies identified the complex, nonlinear paths leading to photocontamination of the optics. At concentrations typical of leached PAG, below 500 ppb, the in-situ self-cleaning processes prevent contamination of the optics. On the other hand, initial experiments with a nano-dropper show that micron-scale particles from the dissolved PAG are formed on the wafer surface when water evaporates. This phenomenon requires further systematic studies both at the fundamental science and the engineering levels.
机译：在一些研究中已经报道了抗蚀剂组分向水中的浸出。溶解在水中的光酸产生剂（PAG）的潜在影响包括最后一个光学表面的光污染以及晶片表面上形成的微粒缺陷。为了确定这些现象对光刻性能（例如光学器件寿命和成品率）的影响，我们启动了一系列对照研究，其中将预定量的PAG引入纯净水中，并对结果进行定量监控。一组研究确定了导致光学污染的复杂的非线性路径。在浸出的PAG的典型浓度低于500 ppb时，原位自清洁过程可防止光学器件受到污染。另一方面，使用纳米滴管的初步实验表明，当水蒸发时，溶解的PAG会形成微米级的颗粒。这种现象需要在基础科学和工程水平上进行进一步的系统研究。

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