• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Physics and technology of high-k materials 9 >Comparison of the Optical Properties of Tantalum Pentoxide, Ta_2O_5, Anodically Grown from E-beam Deposited Tantalum, Ta, with Ta_2O_5 E-beam Deposited from a Ta_2O_5 source
【24h】

Comparison of the Optical Properties of Tantalum Pentoxide, Ta_2O_5, Anodically Grown from E-beam Deposited Tantalum, Ta, with Ta_2O_5 E-beam Deposited from a Ta_2O_5 source

机译：从电子束沉积钽中阳极生长的五氧化二钽Ta_2O_5的光学性质与从Ta_2O_5源沉积的Ta_2O_5电子束的光学性质比较

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The optical properties of Ta_2O_5 anodically grown from e-beam deposited Ta have been compared with Ta_2O_5 e-beam deposited from a Ta_2O_5 source. Optical data were collected with a J. V. Woollam Co., Inc., Spectroscopic Ellipsometer, VASE. Measurements were conducted under the same conditions for both types of samples. Within the precision limits of our eHipsometer and for the thicknesses of the films studied, the absorption coefficient, a, was zero for anodically grown Ta_2O_5 over a very wide range of wavelengths, including the 1310 nm and 1550 nm telecommunications windows. By contrast, the e-beam deposited Ta_2O_5 layers had only a very narrow window in the visible range. Both types had the absorption coefficient of zero at some wavelengths in the ultraviolet range. The anodically grown Ta_2O_5 layers had a calculated average energy gap of 4.23 eV +/- 0.02 eV and a maximum dielectric constant of 28.73.
机译：从电子束沉积的Ta阳极生长的Ta_2O_5的光学性质已与从Ta_2O_5来源沉积的Ta_2O_5电子束进行了比较。用J.V.Woollam Co.，Inc。，光谱椭圆仪，VASE收集光学数据。在两种样品的相同条件下进行测量。在我们的eHipsometer的精度范围内以及所研究薄膜的厚度范围内，阳极生长的Ta_2O_5在非常宽的波长范围内（包括1310 nm和1550 nm电信窗口）的吸收系数a为零。相比之下，电子束沉积的Ta_2O_5层在可见光范围内只有非常狭窄的窗口。两种类型在紫外范围内的某些波长下的吸收系数均为零。阳极生长的Ta_2O_5层的计算得出的平均能隙为4.23 eV +/- 0.02 eV，最大介电常数为28.73。

著录项

  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    A. Kulpa; N. A. F. Jaeger;

  • 作者单位

    Advanced Materials Process Engineering Laboratory, The University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada;

    Advanced Materials Process Engineering Laboratory, The University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号