Aluminum implantation in 4H-SiC: physical and electrical properties

机译：4H-SiC中的铝注入：物理和电学性质

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For this study, 4H-SiC samples were implanted with aluminum at room temperature, 200℃ and 600℃ with different energies, ranging from 30 to 380 keV, for a total dose of 4×10~(15)cm~(-2), to create a "box-like" profile. To activate dopants, samples were then isochronally annealed from 1650℃ to 1850℃ during 30min. The lowest specific contact resistance achieved, evaluated to 1.3xlO"5 fi.cm2, has been obtained for the 200℃ implanted sample annealed at 1850℃. For this condition, Scanning Capacitance Microscopy study has proved that the dopant activity is quite homogeneous in opposition with the samples implanted at RT and 600℃.

机译：为了进行这项研究，在室温，200℃和600℃下，以30 keV至380 keV的不同能量向4H-SiC样品中注入铝，总剂量为4×10〜（15）cm〜（-2），以创建“类似盒子”的配置文件。为了激活掺杂剂，然后在30分钟内将样品从1650℃等温退火至1850℃。对于在1850℃退火的200℃植入的样品，已获得最低的比接触电阻，评估为1.3x10“ 5 fi.cm2。在这种情况下，扫描电容显微镜研究已证明，掺杂剂的活性相对相反。样品在室温和600℃下植入。

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来源
《Silicon carbide and related materials 2012》|2012年|581-584|共4页
会议地点 St. Petersburg(RU)
作者
J.F. Michaud; X. Song; J. Biscarrat; F. Cayrel; E. Collard; D. Alquier;
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作者单位

Universite Francois Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

Universite Francois Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France,STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

Universite Francois Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France,STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

Universite Francois Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

Universite Francois Rabelais, Tours, GREMAN, CNRS-UMR7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France;

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正文语种 eng
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关键词
4H-SiC; aluminum implantation; specific contact resistance; scanning spreading resistance microscopy;

机译：4H-SiC;铝植入比接触电阻扫描扩展电阻显微镜;

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专利

1. Aluminum implantation in 4H-SiC: physical and electrical properties [J] . J.F. Michaud, X. Song, J. Biscarrat, Materials science forum . 2013,第期

机译：4H-SiC中的铝注入：物理和电学性质
2. Electrical transport properties of aluminum-implanted 4H-SiC [J] . J. Pernot, S. Contreras, J. Camassel Journal of Applied Physics . 2005,第2期

机译：铝注入4H-SiC的电传输性能
3. Electrical Impact of the Aluminum p-implant Annealing on Lateral MOSFET Transistors on 4H-SiC n-epi [J] . Stefan Noll, Dick Scholten, Michael Grieb, Materials science forum . 2013,第期

机译：铝p注入退火对4H-SiC n-epi上横向MOSFET晶体管的电影响
4. Aluminum Implantation in 4H-SiC: Physical and Electrical Properties [C] . J.F. Michaud, X. Song, J. Biscarrat, ECSCRM 2012 . 2013

机译：4H-SIC中的铝植入：物理和电气性质
5. Electrical activation studies of silicon implanted aluminum gallium nitride with high aluminum mole fraction [D] . Moore, Elizabeth A. 2007

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8. Electrical and Optical Characterization of Intrinsic and Ion-Implantation Induced Defects in 6H- and 4H-SiC [R] . Scott, M. B. 1999

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Aluminum implantation in 4H-SiC: physical and electrical properties

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