Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

机译：电子和质子辐照下碳化硅中缺陷形成的比较分析

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The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of "low" energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

机译：用0.9 MeV电子以及8 MeV和15 MeV质子进行辐照以研究辐射缺陷。数值模拟了碳化硅膜中质子的散射。获得赋予反冲原子的能量分布直方图。分析直方图时会考虑两个能量范围。在“低”能量的第一个范围内，将创建具有紧密间隔的组件的单个Frenkel对。在第二范围内，反冲原子具有足以产生级联位移的能量。这产生了具有高密度的空位和各种空位复合物的微观区域。

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来源
《Silicon carbide and related materials 2012》|2012年|369-372|共4页
会议地点 St. Petersburg(RU)
作者
A.M. Ivanov; A.A. Lebedev; V.V. Kozlovski;
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作者单位

loffe Physicotechnical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya str., St. Petersburg, 194021 Russia;

loffe Physicotechnical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya str., St. Petersburg, 194021 Russia;

St. Petersburg State Polytechnical University, 29 Polytekhnichaskaya, St. Petersburg, 195251, Russia;

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正文语种 eng
中图分类
关键词
Radiation Defects; Scattering Events; Vacancy-generating Collisions; Energy Distribution of Recoil Atoms;

机译：辐射缺陷；分散事件；空位碰撞反冲原子的能量分布;

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1. Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation [J] . A.M. lvanov, A.A. Lebedev, V.V. Kozlovski Materials science forum . 2013,第期

机译：电子和质子辐照下碳化硅中缺陷形成的比较分析
2. Comparative Results of Low Temperature Annealing of Lightly Doped n-Layers of Silicon Carbide Irradiated by Protons and Electrons [J] . Vitali V. Kozlovski, Oleg Korolkov, Alexander A. Lebedev, Materials science forum . 2020,第期

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3. Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type [J] . Emtsev V.V., Ivanov A.M., Kozlovski V.V., Semiconductors . 2012,第4期

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4. Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation [C] . A.M. Ivanov, A.A. Lebedev, V.V. Kozlovski ECSCRM 2012 . 2013

机译：电子和质子辐射下碳化硅缺陷形成的比较分析
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Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation

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