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首页> 外文会议>Silicon carbide and related materials 2012 >Silicon nitride as top gate dielectric for epitaxial graphene
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Silicon nitride as top gate dielectric for epitaxial graphene

机译：氮化硅作为外延石墨烯的顶栅电介质

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摘要

Silicon nitride (SiN) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a top gate dielectric on epitaxial graphene on 6H-SiC(0001). We compare x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transport measurements which were performed before and after the SiN deposition. We demonstrate that closed layers of SiN are formed without the need for surface activation and that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping. For a limited gate voltage range, a small hysteresis of 0.2 V is observed in top-gated field effect devices.
机译：氮化硅（SiN）通过等离子体增强化学气相沉积（PECVD）作为顶栅电介质沉积在6H-SiC（0001）上的外延石墨烯上。我们比较了在SiN沉积之前和之后进行的X射线光电子能谱（XPS），拉曼光谱和传输测量。我们证明，无需表面活化即可形成SiN封闭层，并且等离子体工艺只会导致石墨烯的轻微降解。 SiN层引起强n型掺杂。对于有限的栅极电压范围，在顶部栅极的场效应器件中观察到0.2 V的小磁滞。

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