6H-SiC junction field effect transistor for high-temperature applications

机译：6H-SiC结型场效应晶体管，用于高温应用

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6H SiC junction field effect transistors have been fabricated. The electrical characteristics of the JFET were measured for temperatures of up to 600℃. The devices showed good saturation characteristics over the whole temperature range. A maximum transconductance of 9.7 mS/mm at room temperature and of 3 mS/mm at 600℃ has been found for a JFET with 12.7 μm gate length.

机译：已经制造了6H SiC结场效应晶体管。在高达600℃的温度下测量JFET的电特性。该器件在整个温度范围内均显示出良好的饱和特性。对于栅极长度为12.7μm的JFET，室温下的最大跨导为9.7 mS / mm，600℃下的最大跨导为3 mS / mm。

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来源
《Silicon carbide and related materials》|1993年|625-627|共3页
会议地点 Washington DC(US);Washington DC(US)
作者
K. Dohnke; R. Rupp; D. Peters; J. Voelkl; D. Stephani;
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作者单位

Siemens AG, Corporate Research and Development, PO. Box 3220, D-91050 Erlangen, Germany;

Siemens AG, Corporate Research and Development, PO. Box 3220, D-91050 Erlangen, Germany;

Siemens AG, Corporate Research and Development, PO. Box 3220, D-91050 Erlangen, Germany;

Siemens AG, Corporate Research and Development, PO. Box 3220, D-91050 Erlangen, Germany;

Siemens AG, Corporate Research and Development, PO. Box 3220, D-91050 Erlangen, Germany;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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6H-SiC junction field effect transistor for high-temperature applications

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