Growth of Ge_(1-x)C_y alloys by molecular beam epitaxy

著录项

• 来源
  《Silicon carbide and related materials》|1993年|357-360|共4页
• 会议地点 Washington DC(US);Washington DC(US)
• 作者

  J. Kolodzey; S. Zhang; P. ONeil; E. Hall; R. McAnnally; C.P. Swann;

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• 作者单位

  Electrical Engineering Department, 140 Evans Hall University of Delaware, Newark, DE, 19716;

  Electrical Engineering Department, 140 Evans Hall University of Delaware, Newark, DE, 19716;

  Electrical Engineering Department, 140 Evans Hall University of Delaware, Newark, DE, 19716;

  Electrical Engineering Department, 140 Evans Hall University of Delaware, Newark, DE, 19716;

  Electrical Engineering Department, 140 Evans Hall University of Delaware, Newark, DE, 19716;

  Department of Physics and Astronomy. University of Delaware;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 硅酸盐工业;无机质材料;
• 关键词