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首页> 外文会议>Society of Vacuum Coaters 46th Annual Technical Conference; May 3-8, 2003; San Francisco, California USA >Ga-Doped ZnO Thin Films by DC Magnetron Sputtering Using H_2/Ar Gas
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Ga-Doped ZnO Thin Films by DC Magnetron Sputtering Using H_2/Ar Gas

机译：H_2 / Ar气体直流磁控溅射Ga掺杂ZnO薄膜

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摘要

We investigated the effects of residual water partial pressure (P_(H2O)) on electrical and optical properties of Ga-doped ZnO films (GZO). The GZO films were deposited onto glass by planar DC magnetron sputtering. With increasing P_(H2O), the resistivity (p) of the films deposited in Ar 100% (Ar-films) significantly increased due to the decrease in both free carrier density and Hall mobility. The transmittance in the wavelength region of 350-400 nm for the films also increased with increasing P_(H2O). SIMS and XRD analyses revealed that the hydrogen concentration in the films increased with increasing P_(H2O), indicating that the origin of the hydrogen is attributed to the residual water and the increase in p and transmittance may be due to the structural change of the films. On the other hand, the p and optical properties of the films deposited in H_2/Ar=1/5 gas (H_2/Ar-films) were not dependent upon P_(H2O). The hydrogen concentration in the H_2/Ar-films was almost constant against P_(H2O) and is higher than that of Ar-films even when the P_(H2O) was increased up to 4.0 x 10~(-3) Pa. These results indicate that the hydrogen in the H_2/Ar-films primarily comes from H_2 gas. Based on these analyses, we discuss the difference in stability of the electrical and optical properties of GZO films against P_(H2O) between Ar and H_2/Ar-films.
机译：我们研究了残留水分压（P_（H2O））对掺Ga的ZnO薄膜（GZO）的电学和光学性能的影响。通过平面直流磁控溅射将GZO膜沉积到玻璃上。随着P_（H2O）的增加，由于自由载流子密度和霍尔迁移率的降低，沉积在Ar 100％的膜（Ar膜）中的电阻率（p）显着增加。随着P_（H2O）的增加，膜在350-400nm波长范围内的透射率也增加。 SIMS和XRD分析表明，薄膜中的氢浓度随着P_（H2O）的增加而增加，这表明氢的起源是由于残留水引起的，p和透射率的增加可能是由于薄膜的结构变化所致。另一方面，沉积在H_2 / Ar = 1/5气体中的薄膜（H_2 / Ar薄膜）的p和光学性质不依赖于P_（H2O）。 H_2 / Ar膜中的氢浓度相对于P_（H2O）几乎恒定，即使P_（H2O）增大至4.0 x 10〜（-3）Pa，也高于Ar膜。表明H_2 / Ar膜中的氢主要来自H_2气体。基于这些分析，我们讨论了Ar和H_2 / Ar膜之间GZO膜对P_（H2O）的电学和光学性质稳定性的差异。

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