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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Modification of the electronic properties of a-Si_(l-x)C_x:H by Fe~+ ion implantation
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Modification of the electronic properties of a-Si_(l-x)C_x:H by Fe~+ ion implantation

机译：Fe〜+离子注入修饰a-Si_（l-x）C_x：H的电子性质

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摘要

The electrical and optical properties of hydrogenated amorphous silicon-carbide alloy films (a-Si_(l-x)C_x:H), modified by Fe~+ ion implantation (D = 1 X 10~(16) - 1 X 10~(17) cm~2), have been investigated. Optical transmission spectra have been measured in the visible range (400-900 nm) and considerable absorption edge shift to the longer wavelength region has been registered, together with well-defined decrease of transmittance in the whole measured range. These effects are increased with the dose and are similar for samples with different carbon content (x_1=0.08 and x_2=0.15). Room temperature (RT) surface electrical conductivity is also increased by Fe~+ implantation and the effect is most pronounced for the highest doses (D ~ 10~(17)cm~(-2)). The temperature dependence of the conductivity was measured in the temperature range from RT to 250 ℃. The activation energy is considerably reduced and the effect is again strongest for the highest doses. From the above results we conclude that high doses Fe~+ implantation in a-Si_(l-x)C_x:H affects both the localised states deep in the gap and the shallow slates in the band tails.
机译：Fe〜+离子注入修饰的非晶态碳化硅合金薄膜（a-Si_（lx）C_x：H）的电和光学性质（D = 1 X 10〜（16）-1 X 10〜（17） cm〜2），已被调查。已在可见光范围（400-900 nm）内测量了光学透射光谱，并记录了向较长波长区域的明显吸收边缘偏移，以及在整个测量范围内透射率的明显下降。这些影响随着剂量的增加而增加，并且对于具有不同碳含量（x_1 = 0.08和x_2 = 0.15）的样品也是如此。 Fe〜+注入也会增加室温（RT）表面的电导率，并且在最高剂量（D〜10〜（17）cm〜（-2））下效果最明显。在室温至250℃的温度范围内测量电导率的温度依赖性。激活能量大大降低，对于最高剂量，效果再次最强。根据以上结果，我们得出结论，在a-Si_（1-x）C_x：H中高剂量的Fe〜+注入会影响间隙深处的局部状态和带尾中的浅板岩。

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