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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >The Element Depth Profiles in Ultrathin Silicon Oxynitride Films
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The Element Depth Profiles in Ultrathin Silicon Oxynitride Films

机译：超薄氧氮化硅薄膜中的元素深度分布

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摘要

Distribution of nitrogen in the thin silicon oxynitride films (less than 5 nm) obtained by plasma nitridation of SiO_2 has been studied by non-destructive angular dependent XPS. For obtaining information about the element distribution in-depth the regularization technique has been applied. It is shown that the depth of nitrogen penetration increases with decreasing the SiO_2 film thickness. In this case the maximum of the nitrogen distribution is enhanced and shifted to the Si-SiO_2 interface. The results are compared with depth-profiling obtained by sputtering and wet chemical etching. The dependence of the binding energies on the film thickness has been studied. The influence of different factors on the chemical shift in the ultrathin films has been analyzed.
机译：通过无损角度依赖性XPS研究了通过SiO_2的等离子体氮化获得的氮氧化硅薄膜（小于5 nm）中氮的分布。为了深入获得有关元素分布的信息，已应用正则化技术。结果表明，随着SiO_2膜厚度的减小，氮的渗透深度增加。在这种情况下，氮分布的最大值被增强并移至Si-SiO_2界面。将结果与通过溅射和湿法化学蚀刻获得的深度轮廓进行比较。已经研究了结合能对膜厚度的依赖性。分析了不同因素对超薄膜化学位移的影响。

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