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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >Location of Current Carrying Faults in Integrated Circuits by Magnetic Force Microscopy
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Location of Current Carrying Faults in Integrated Circuits by Magnetic Force Microscopy

机译：电磁显微镜在集成电路中载流故障的定位

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摘要

In Integrated Circuits failure analysis excessive power supply current flowing into the IC is often used to indicate the presence of a faulty device. Location of these faulty devices can be problematic as the devices are often buried under several layers of conducting interconnect. By imaging the magnetic field produced by current flowing in an IC a faulty device can be located. In this paper we present experimental results on imaging current-carrying faults on integrated circuits using Magnetic force microscopy. We have experimentally determined that MFM is capable of measuring currents as small as 1 to 10 microampere on ICs in a 30 Hz bandwidth. We have carried out modeling calculations comparing the simulation results with experimental results using realistic MFM tip geometry. From these results we have devised a method to accurately locate the position of the internal current carrying faults from MFM images with micrometer uncertainty.
机译：在集成电路故障分析中，通常会使用流入IC的过多电源电流来指示存在故障的设备。这些故障设备的位置可能会出现问题，因为这些设备通常被埋在多层导电互连层下面。通过对流过IC的电流产生的磁场进行成像，可以定位故障设备。在本文中，我们介绍了使用磁力显微镜对集成电路上的载流故障进行成像的实验结果。我们已经通过实验确定，MFM能够在30 Hz带宽下测量IC上小至1至10微安的电流。我们已经进行了建模计算，将模拟结果与使用实际MFM尖端几何形状的实验结果进行了比较。根据这些结果，我们设计了一种方法，该方法可以精确地从具有微米不确定度的MFM图像中定位内部载流故障的位置。

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