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首页> 外文会议>Thirty - first Symposium on State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI), Honolulu, Hawaii; October 17-22, 1999 >Growth Mechanism in the multiple buffer layer of GaN on sapphire by organometallic vapor phase epitaxy
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Growth Mechanism in the multiple buffer layer of GaN on sapphire by organometallic vapor phase epitaxy

机译：有机金属气相外延在蓝宝石上GaN多缓冲层中的生长机理

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摘要

High-quality GaN epitaxial layers with a multiple-pair buffer layer have been grown on sapphire substrates in a separate-flow reactor by metalorganic chemical vapor deposition. Each pair of buffer layer consists of a 300 A thick GaN nucleation layer grown at a low temperature of 525 deg C and a 1-4 mu m thick GaN epitaxial layer grown at a high temperature of 1000 deg C. The GaN samples with a multiple-pair buffer layers are characterized by etch-pit density and cross-section TEM measurements. In this experimental, the regions grown on multiple buffer layer were thoroughly examined. Cross-section TEM clearly revealed characteristic defects along the (1120) direction in the various pairs of buffer-layer grown region. We observed the interface of buffer layer and buffer layer, which most vertical dislocation can be terminated in the interface and few dislocation was repropagation in the buffer-layer succession growth. The influence of multiple buffer structure and the dislocation distribution of near the buffer-layer interface are discussed.
机译：带有多对缓冲层的高质量GaN外延层已通过金属有机化学气相沉积法在分离流反应器中的蓝宝石衬底上生长。每对缓冲层由在525摄氏度的低温下生长的300 A厚GaN成核层和在1000摄氏度的高温下生长的1-4μm厚的GaN外延层组成。GaN样品具有多个对缓冲层的特征在于蚀刻坑密度和横截面TEM测量。在该实验中，彻底检查了在多个缓冲层上生长的区域。横截面TEM清楚地揭示了在各对缓冲层生长区域中沿（1120）方向的特征缺陷。我们观察到缓冲层和缓冲层的界面，其中大多数垂直位错可以终止于该界面，并且很少的位错在缓冲层的连续生长中重新传播。讨论了多重缓冲结构的影响以及缓冲层界面附近位错的分布。

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