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首页> 外文会议>Vertical external cavity surface emitting lasers (VECSELs) III >TEM based analysis of Ⅲ-Sb VECSELs on GaAs substrates for improved laser performance
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TEM based analysis of Ⅲ-Sb VECSELs on GaAs substrates for improved laser performance

机译：基于TEM分析GaAs衬底上的Ⅲ-SbVECSEL，以提高激光性能

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摘要

The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 μm wavelength range are typically based on InGaAsSb/AlGaAsSb quantum wells on AlAsSb/GaSb distributed Bragg reflectors (DBRs) grown lattice-matched on GaSb substrates. The ability to grow such antimonide VECSEL structures on GaAs substrates can take advantage of the superior AlAs based etch-stop layers and mature DBR technology based on GaAs substrates. The growth of such Ill-Sb VECSELs on GaAs substrates is non-trivial due to the 7.78% lattice mismatch between the antimonide based active region and the GaAs/AlGaAs DBR. The challenge is therefore to reduce the threading dislocation density in the active region without a very thick metamorphic buffer and this is achieved by inducing 90° interfacial misfit dislocation arrays between the GaSb and GaAs layers. In this presentation we make use of cross section transmission electron microscopy to analyze a variety of approaches to designing and growing Ill-Sb VECSELs on GaAs substrates to achieve a low threading dislocation density. We shall demonstrate the failure mechanisms in such growths and we analyze the extent to which the threading dislocations are able to permeate a thick active region. Finally, we present growth strategies and supporting results showing low-defect density Ill-Sb VECSEL active regions on GaAs.
机译：在1.8至2.8μm波长范围内运行的基于锑化物的垂直外腔表面发射激光器（VECSEL）通常基于在GaSb基板上生长的AlAsSb / GaSb分布布拉格反射器（DBR）上的InGaAsSb / AlGaAsSb量子阱。在GaAs衬底上生长此类锑VECSEL结构的能力可以利用基于AlAs的优异蚀刻停止层和基于GaAs衬底的成熟DBR技术的优势。由于基于锑化物的有源区与GaAs / AlGaAs DBR之间的7.78％晶格失配，这种III-Sb VECSEL在GaAs衬底上的生长是不平凡的。因此，面临的挑战是在没有非常厚的变质缓冲层的情况下降低有源区中的螺纹位错密度，这是通过在GaSb和GaAs层之间引入90°界面失配位错阵列来实现的。在本演示中，我们利用截面透射电子显微镜分析了多种在GaAs衬底上设计和生长Ill-Sb VECSEL的方法，以实现低穿线位错密度。我们将证明这种增长的破坏机理，并分析螺纹位错能够渗透到较厚的活动区域的程度。最后，我们提出了生长策略和支持性结果，表明GaAs上的低缺陷密度Ill-Sb VECSEL活性区域。

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  • 来源
  • 会议地点 San Francisco CA(US)
  • 作者

    P. Ahirwar; D. Shima; T.J. Rotter; S. P. R. Clark; S. J. Addamane; C. P. Hains; L. R. Dawson; G. Balakrishnan; R. Bedford; Y.Y. Lai; A. Laurain; J. Hader; J. V.Moloney;

  • 作者单位

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Center for High technology Materials , University of New Mexico, Albuquerque, NM 87106;

    Air Force Research Laboratory, AFRL/RYD, Wright Patterson AFB, Dayton, OH 45433;

    College of Optical Sciences, University of Arizona, Tucson, AZ 85721;

    College of Optical Sciences, University of Arizona, Tucson, AZ 85721;

    College of Optical Sciences, University of Arizona, Tucson, AZ 85721;

    College of Optical Sciences, University of Arizona, Tucson, AZ 85721;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Semiconductor lasers; Quantum well lasers; Surface-emitting lasers; Mismatched epitaxy;

    机译：半导体激光器；量子阱激光器；表面发射激光器；外延不匹配;

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