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A Universal Scheme for Patterning of Oxides via Thermal Nanoimprint Lithography

机译：通过热纳米压印光刻技术对氧化物进行构图的通用方案

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Direct patterning of oxides using thermal nanoimprint lithography is performed using either the sol-gel or methacrylate route. The sol-gel method results in resists with long shelf-life, but with high surface energy and a considerable amount of solvent that affects the quality of imprinting. The methacrylate route, which is limited to certain oxides, produces polymerizable resists, leading to low surface energy, but suffers from the shorter shelf-life of precursors. By combining the benignant elements from both these routes, a universal method of direct thermal nanoimprinting of oxides is demonstrated using precursors produced by reacting an alkoxide with a polymerizable chelating agent such as 2-(methacryloyloxy)ethyl acetoacetate (MAEAA). MAEAA possesses β-ketoester, which results in the formation of environmentally stable, chelated alkoxide with long shelf-life, and methacrylate groups, which provide a reactive monomer pendant for in situ copolymerization with a cross-linker during imprinting. Polymerization leads to trapping of cations, lowering of surface energy, strengthening of imprints, which enables easy and clean demolding over 1cm×2 cm patterned area with≈100% yield. Heat-treatment of imprints gives amorphous/crystalline oxide patterns. This alliance between two routes enables the successful imprinting of numerous oxides including AI_2O_3, Ga_2O_3, ln_2O_3, Y_2O_3, B_2O_3, TiO_2, SnO_2, ZrO_2, GeO_2, HfO_2, Nb_2O_5, Ta_2O_5, V_2O_5, and WO_3.
机译：使用溶胶-凝胶法或甲基丙烯酸酯法，可以使用热纳米压印光刻技术对氧化物进行直接图案化。溶胶-凝胶法可使抗蚀剂具有较长的保存期限，但具有较高的表面能和大量溶剂，从而影响压印质量。限于某些氧化物的甲基丙烯酸酯途径会产生可聚合的抗蚀剂，从而导致较低的表面能，但会遭受前驱体较短的保存期限的困扰。通过结合来自这两种途径的良性元素，证明了使用使醇盐与可聚合的螯合剂（例如2-（甲基丙烯酰氧基）乙基乙酰乙酸酯（MAEAA））反应制得的前驱体，可以直接对氧化物进行直接热纳米压印。 MAEAA拥有β-酮酸酯，可导致形成环境稳定的，具有长保存期限的螯合醇盐和甲基丙烯酸酯基团，这些甲基丙烯酸酯基团可提供活性单体侧基，可在压印过程中与交联剂进行原位共聚。聚合反应会导致阳离子的捕获，表面能的降低，压印的增强，从而可以在1cm×2cm的图案区域上轻松清洁脱模，产率约为100％。压印的热处理产生非晶/结晶氧化物图案。两条路线之间的这种联盟使得能够成功印记多种氧化物，包括AI_2O_3，Ga_2O_3，ln_2O_3，Y_2O_3，B_2O_3，TiO_2，SnO_2，ZrO_2，GeO_2，HfO_2，Nb_2O_5，Ta_2O_5，V_2O_5和WO_3。

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  • 来源
    《Advanced Functional Materials》 |2013年第17期|2201-2211|共11页
  • 作者

    Saman Safari Dinachali; Mohammad S. M. Saifullah; Ramakrishnan Ganesan; Eng San Thian; Chaobin He;

  • 作者单位

    Institute of Materials Research and Engineering A STAR (Agency for Science, Technology and Research) 3 Research Link, Singapore 117602, Republic of Singapore,Department of Mechanical Engineering National University of Singapore 9 Engineering Drive 1, Singapore 117576, Republic of Singapore;

    Institute of Materials Research and Engineering A STAR (Agency for Science, Technology and Research) 3 Research Link, Singapore 117602, Republic of Singapore;

    Department of Chemistry Birla Institute of Technology &. Science Pilani-Hyderabad Campus, Jawahar Nagar, Shameerpet Mandal,Hyderabad-500 078, Andhra Pradesh, India;

    Department of Mechanical Engineering National University of Singapore 9 Engineering Drive 1, Singapore 117576, Republic of Singapore;

    Institute of Materials Research and Engineering A STAR (Agency for Science, Technology and Research) 3 Research Link, Singapore 117602, Republic of Singapore,Department of Materials Science & Engineering National University of Singapore 21 Lower Kent Ridge Road, Singapore 119077, Republic of Singapore;

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